概述
数据手册CP380-3_15 概述
NPN Transistors
CP380-3_15 数据手册
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PDF下载SMD Type
Transistors
NPN Transistors
CP380
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● Collector Current Capability IC=50mA
1
2
● Collector Emitter Voltage VCEO=30V
+0.02
-0.02
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
35
Unit
V
VCBO
VCEO
VEBO
30
4
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
50
mA
P
C
200
150
mW
T
J
℃
Storage Temperature Range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
35
30
4
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA， I
Ic= 1 mA， I = 0
= 100μA， I = 0
CB= 35 V , I = 0
EB= 4V , I =0
E= 0
B
I
E
C
I
CBO
EBO
V
V
E
0.1
1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=10 mA, I
B
=1mA
=1mA
0.4
1.2
240
3.2
V
C
=10 mA, I
B
h
FE
V
V
V
CE= 12V, I
CB= 10V, I
CE= 10V, I
C
= 2mA
70
Collector output capacitance
Transition frequency
C
ob
T
E
E
=0,f=1MHz
= -1mA
pF
f
100
MHz
■ Classification of hfe
Type
Range
Marking
CP380-O
CP380-Y
120-240
70-140
380
1
www.kexin.com.cn
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