CXT2907A [KEXIN]
Surface Mount PNP Switching Transistor; 表面贴装PNP开关晶体管
| 型号： | CXT2907A |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Surface Mount PNP Switching Transistor |
| 文件： | 总3页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Surface Mount PNP Switching Transistor
CXT2907A
Features
High current (max.600mA)
Low voltage (max.60V)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VCBO
Rating
-60
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Power dissipation
VCEO
VEBO
IC
-60
-5
V
V
-600
mA
W
PD
1.2
Junction temperature
Storage temperature
Thermal Resistance
Tj
150
Tstg
èJA
-65 to +150
104
/W
1
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SMD Type
Transistors
CXT2907A
Electrical Characteristics Ta = 25
Parameter
Symbol Testconditons
Min
Typ
Max
-10
-10
-50
Unit
nA
A
IE = 0; VCB = -50 V
Collector-base cut-off current
Emitter-base cut-off current
ICBO
IEBO
IE = 0; VCB = -50 V; Tj = 125
IC = 0; VEB = -5 V
nA
IC = -0.1 mA; VCE = -10 V
IC = -1 mA; VCE = -10 V
IC = -10 mA; VCE = -10 V
IC = -150 mA; VCE = -10 V
IC = -500 mA; VCE = -10 V
IC = -150 mA; IB = -15mA
IC = -500 mA; IB = -50 mA
IC = -150 mA; IB = -15 mA
IC = -500 mA; IB = -50 mA
75
100
100
100
50
DC current gain
hFE
300
-0.4
-1.6
-1.3
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCEsat
VBEsat
-2.6
45
V
ns
Turn-on time
Delay time
ton
td
tr
VCC= 30VV, BE -0.5V,IC= -150mA,
=
10
ns
IB1 = -15mA
Rise time
40
ns
Turn-off time
Storage time
Fall time
toff
ts
100
80
ns
I
VCC= -6.0V,CI= -150mA,B1 I
B2 -15mA
=
ns
=
tf
30
ns
Transition frequency
fT
IC = -50 mA; VCE = -20 V; f = 100 MHz
200
MHz
2
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SMD Type
Transistors
CXT2907A
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
500
400
300
200
100
0
0.5
0.4
0.3
0.2
0.1
0
VCE = 5V
β = 10
125 °C
25 °C
25 °C
125 °C
- 40 °C
- 40 °C
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
1
0.8
0.6
0.4
0.2
0
- 40 °C
- 40 °C
25 °C
25 °C
125 °C
125 °C
β = 10
V
= 5V
CE
1
10
100
500
0.1
1
10
25
I C- COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Input and Output Capacitance
vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
20
16
12
8
100
10
V
= 35V
CB
C
ib
1
0.1
C
ob
4
0.01
0
25
50
75
100
125
0.1
1
10
50
TA- AMBIE NT TEMP ERATURE ( C)
REVERSE BIAS VOLTAGE (V)
°
3
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