CZT5401 [KEXIN]
PNP Silicon Transistor; PNP硅晶体管型号: | CZT5401 |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | PNP Silicon Transistor |
文件: | 总1页 (文件大小:36K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Silicon Transistor
CZT5401
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
6.50
-0.2
+0.2
0.90
-0.2
Features
+0.1
3.00
-0.1
+0.3
7.00
-0.3
4
1 Base
2 Collector
1
2
3
+0.1
0.70
-0.1
3 Emitter
2.9
4.6
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
160
Unit
V
150
V
5
V
Collector Current
600
mA
W
Power Dissipation
PD
2
Operating and Storage Junction Temperature
Thermal Resistance
TJ,Tstg
ÈJA
-65 to 150
62.5
/W
Electrical Characteristics Ta = 25
Symbol
ICBO
Testconditons
Min
Max
50
Unit
nA
mA
nA
V
VCB=100V
ICBO
50
VCB=100V, TA=150
VEB=3.0V
IEBO
50
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
IC=100ìA
160
150
5.0
IC=1.0mA
V
IE=10ìA
V
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
0.2
0.5
1.0
1.0
V
V
V
V
50
60
hFE
240
50
fT
100
300
6.0
MHz
pF
Cob
hfe
40
200
VCE=5.0V, IC=200mA, RS=10
Ù,f=10Hz to 15.7kHz
NF
8.0
dB
1
www.kexin.com.cn
相关型号:
CZT5401ETR
Power Bipolar Transistor, 0.6A I(C), 220V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, ROHS COMPLIANT PACKAGE-4
CENTRAL
CZT5401G
Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-4
CENTRAL
©2020 ICPDF网 联系我们和版权申明