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元器件品牌
KDB2670
[KEXIN]
200V N-Channel PowerTrench MOSFET; 200V N沟道PowerTrench MOSFET的
元器件型号：
KDB2670
生产厂家：
GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述和应用：
200V N-Channel PowerTrench MOSFET
200V N沟道PowerTrench MOSFET的
PDF文件：
总2页 (文件大小：51K)
下载文档：
下载PDF数据表文档文件
型号参数：KDB2670参数
查看货源
KDB32
Ideally Suited for Automatic Assembly
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156
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0
DYELEC
KDB325
Ideally Suited for Automatic Assembly
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156
-
0
DYELEC
KDB325S
Ideally Suited for Automatic Assembly
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156
-
0
DYELEC
KDB32S
Ideally Suited for Automatic Assembly
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156
-
0
DYELEC
KDB3632
rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A UIS Capability (Single Pulse and Repetitive Pulse)
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8
TYSEMI
KDB3632
N-Channel PowerTrench MOSFET
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156
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14
KEXIN
KDB3652
N-Channel PowerTrench MOSFET
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156
-
10
KEXIN
KDB3652
rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V
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15
TYSEMI
KDB3672
rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V
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156
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9
TYSEMI
KDB3672
N-Channel PowerTrench MOSFET
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156
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9
KEXIN
KDB3682
N-Channel PowerTrench MOSFET
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on line
156
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5
KEXIN
KDB3682
rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V
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156
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10
TYSEMI
KDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
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156
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10
KEXIN
KDB5690
N-Channel PowerTrenchTMMOSFET
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156
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30
KEXIN
KDB5690
32 A, 60 V. RDS(ON) = 0.027 VGS = 10 V RDS(ON) = 0.032 VGS = 6 V
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9
TYSEMI
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