概述
数据手册KDS2572 概述
N-Channel UltraFET Trench MOSFET N沟道UltraFET沟槽MOSFET
KDS2572 数据手册
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PDF下载SMD Type
IC
N-Channel UltraFET Trench MOSFET
KDS2572
Features
RDS(ON) = 0.040 (Typ.), VGS = 10V
Qg(TOT) = 29nC (Typ.), VGS = 10V
Low QRR Body Diode
Maximized efficiency at high frequencies
UIS Rated
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
VDSS
Rating
150
20
Unit
V
Gate to Source Voltage
VGS
V
4.9
A
Drain Current Continuous (TC = 25 ) *1
Drain Current Continuous (TC = 100 ) *1
Power dissipation
ID
3.1
A
2.5
W
PD
20
Derate above 25
mW/
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Case at 10 seconds *2
Thermal Resistance Junction to Case at steady state *2
*1 VGS = 10V, RqJA = 50 /W
TJ, TSTG
-55 to 150
25
R
R
R
JC
JA
JA
/W
/W
/W
50
85
*2 R JA is measured with 1.0in2 copper on FR-4 board
1
www.kexin.com.cn
SMD Type
IC
KDS2572
Electrical Characteristics Ta = 25
Parameter
Symbol
BVDSS
Testconditons
Min
150
Typ
Max
1
Unit
V
Drain to Source Breakdown Voltage
ID = 250mA, VGS = 0V
VDS = 120V,VGS = 0V
VDS = 120V,VGS = 0V ,TC = 150
VGS = 20V
Zero Gate Voltage Drain Current
IDSS
A
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Drain to Source On Resistance
Input Capacitance
IGSS
VGS(TH)
rDS(ON)
rDS(ON)
CISS
nA
V
100
4
VGS = VDS, ID = 250mA
ID = 4.9A, VGS = 10V
ID = 4.9A, VGS = 6V
2
0.040 0.047
0.044 0.053
2050
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
V
VDS = 25V, VGS = 0V,f = 1MHz
Output Capacitance
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
220
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
Gate Charge Threshold to Plateau
Turn-On Time
48
VGS=0V to 10V,VDD=75V,ID=4.9A,Ig=1.0mA
VGS=0V to 2V,VDD=75V,ID=4.9A,Ig=1.0mA
29
4
38
6
8
VDD = 75V,ID = 4.9A,Ig = 1.0mA
Qgd
6
Qgs2
tON
td(ON)
tr
td(OFF)
tf
4
27
Turn-On Delay Time
14
4
Rise Time
VDD = 75V, ID = 4.9A,VGS = 10V, RG = 10
Turn-Off Delay Time
44
22
Fall Time
Turn-Off Time
tOFF
100
1.25
1.0
ISD = 4.9A
ISD = 3.1A
Source to Drain Diode Voltage
VSD
V
Reverse Recovery Time
trr
72
ns
nC
ISD = 4.9A, dISD/dt =100A/
ISD = 4.9, dISD/dt =100A/
s
Reverse Recovered Charge
QRR
158
s
2
www.kexin.com.cn
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