KI1501DL [KEXIN]
Complementary 20-V (D-S) Low-Threshold MOSFET; 补充20 -V （D -S ）低阈值MOSFET
| 型号： | KI1501DL |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Complementary 20-V (D-S) Low-Threshold MOSFET |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Complementary 20-V (D-S) Low-Threshold MOSFET
KI1501DL
SOT-363
Unit: mm
+0.1
1.3
-0.1
0.65
PIN Configuration
+0.05
0.1
-0.02
+0.1
0.3
-0.1
+0.1
2.1
-0.1
Absolute Maximum Ratings TA = 25
Parameter
Drain-Source Voltage
Symbol
VDS
N-Channel
20
P-Channel
-20
Unit
V
V
Gate-Source Voltage
VGS
8
8
250
200
500
-180
-140
-500
mA
mA
mA
W
Continuous Drain Current (TJ = 150 )* TA = 25
TA = 70
ID
Pulsed Drain Current
IDM
PD
0.2
Maximum Power Dissipation*
TA = 25
TA = 70
0.13
W
-55 to 150
625
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient*
TJ, Tstg
RthJA
/W
*Surface Mounted on FR4 Board, t
10 sec.
1
www.kexin.com.cn
SMD Type
Transistors
KI1501DL
Electrical Characteristics TJ = 25
Testconditons
Parameter
Symbol
Min
20
Typ
24
-24
0.9
-0.9
2
Max
Unit
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
VGS = 0 V, ID = 10
VGS = 0 V, ID =-10
VDS = VGS, ID = 50
VDS = VGS, ID = -50
A
A
A
Drain Source Breakdown Voltage
V(BR)DSS
VGS( th)
IGSS
-20
0.4
-0.4
1.5
-1.5
100
100
Gate Threshold Voltage
Gate Body Leakage
A
VDS = 0 V VGS = 8V
2
nA
A
VDS = 20 V, VGS = 0 V
0.001 100
VDS = -20 V, VGS = 0 V
-0.001 -100
Zero Gate Voltage Drain Current
On State Drain Currenta
IDSS
ID(on)
rDS(on)
1
VDS = 20 V, VGS = 0 V, TJ = 55
VDS = -20 V, VGS = 0 V, TJ = 55
VDS 2.5 V, VGS = 5.0 V
VDS -2.5 V, VGS = -5.0 V
-1
120
-120
400
mA
VDS
VDS
4.5 V, VGS = 8.0 V
-4.5 V, VGS = -8.0 V
-400
VGS = 2.5 V, ID = 150 mA
VGS = -2.5 V, ID = -75 mA
VGS = 4.5 V, ID = 250 mA
VGS = -4.5 V, ID = -180 mA
VDS = 2.5 V, ID = 50 mA
VDS = -2.5 V, ID = - 50 mA
IS = 50 mA, VGS = 0 V
1.6
4
2.5
5
Drain Source On State Resistance*1
1.2
2.6
150
200
0.7
-0.7
300
300
25
25
100
100
15
15
11
11
5
2.0
3.8
Forward Transconductance*1
Diode Forward Voltage*1
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Time
gfs
VSD
Qg
mS
V
1.2
-1.2
450
450
IS = -50 mA, VGS = 0 V
N-Channel
VDS = 5 V, VGS = 4.5 V, ID = 100 mA
P-Channel
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
pC
VDS = -5 V, VGS = -4.5 V, ID = -mA *2
N-Channel
VDS = 5 V, VGS = 0 V
P-Channel
pF
VDS = -5 V, VGS =0 V *2
5
N Channel
7
12
12
35
35
30
30
15
15
7
VDD = 3 V, RL = 100
ID= 0.25 A, VGEN = 4.5 V, Rg = 10
25
25
19
19
9
Rise Time
ns
P-Channel
Turn Off Delay Time
Fall Time
td( off)
tf
VDD = -3 V, RL = 100
ID= -0.25 A, VGEN = -4.5 V, Rg = 10
9
*1 Guaranteed by design, not subject to production testing.
*2 Pulse test; pulse width 300 s, duty cycle 2%.
2
www.kexin.com.cn
相关型号：
©2020 ICPDF网 联系我们和版权申明