KI5504DC [KEXIN]
Complementary 30-V (D-S) MOSFET; 补充30 -V （D -S ）的MOSFET
| 型号： | KI5504DC |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Complementary 30-V (D-S) MOSFET |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
Complementary 30-V (D-S) MOSFET
KI5504DC
PIN Configuration
Absolute Maximum Ratings TA = 25
N-Channel
5 secs Steady State
30
P-Channel
5 secs Steady State
Parameter
Symbol
Unit
-30
Drain-Source Voltage
VDS
VGS
V
V
Gate-Source Voltage
20
10
A
Continuous Drain Current (TJ = 150 )* TA = 25
TA = 85
3.9
2.8
2.9
2.1
2.8
2.0
2.1
1.5
ID
A
Pulsed Drain Current
IDM
IS
A
Continuous Source Current (Diode Conduction)*
1.8
0.9
-1.8
2.1
1.1
-0.9
1.1
0.6
A
2.1
1.1
1.1
0.6
W
W
Maximum Power Dissipation*
TA = 25
TA = 85
PD
-55 to 150
Operating Junction and Storage Temperature Range
*Surface Mounted on 1" X 1" FR4 Board.
TJ, Tstg
Thermal Resistance Ratings
Parameter
Symbol
RthJA
Typ
50
Max
60
Unit
t
5 sec
Maximum Junction-to-Ambient*
Steady State
Steady State
90
110
40
/W
Maximum Junction-to-Case (Drain)
RthJF
30
*Surface Mounted on 1" X 1" FR4 Board.
1
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SMD Type
IC
KI5504DC
Electrical Characteristics TJ = 25
Testconditons
VDS = VGS, ID = 250
Parameter
Symbol
Min
0.1
Typ
Max
Unit
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
A
Gate Threshold Voltage
VGS( th)
-1.0
VDS = VGS, ID = -250
VDS = 0 V VGS = 20 V
VDS = 0 V VGS = 20 V
VDS = 24V, VGS = 0 V
VDS = -24V, VGS = 0 V
A
100
100
1
Gate Body Leakage
IGSS
nA
-1
Zero Gate Voltage Drain Current
On State Drain Currenta
IDSS
ID(on)
rDS(on)
5
VDS = 24 V, VGS = 0 V, TJ = 85
VDS = -24V, VGS = 0 V, TJ = 85
VDS 5 V, VGS = 10 V
VDS -5 V, VGS = -10 V
VGS = 10 V, ID = 11.8A
VGS = -10 V, ID = -2.1A
VGS = 4.5 V, ID = 2.2A
VGS = -4.5 V, ID = -1.6A
VDS = 15 V, ID = 2.9A
VDS = -15 V, ID = -2.1A
IS = 0.9A, VGS = 0 V
A
A
-5
10
-10
0.072 0.085
0.137 0.165
0.120 0.143
0.240 0.290
6
Drain Source On State Resistance*
Forward Transconductance*
Diode Forward Voltage*
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn On Time
gfs
VSD
Qg
S
V
3
0.8
-0.8
5
1.2
-1.2
7.5
6.6
IS = -0.9A, VGS = 0 V
N-Channel
VDS = 15V, VGS = 10V, ID = 2.9A
5.5
0.8
1.2
1.0
0.9
7
Qgs
Qgd
td(on)
tr
nC
P-Channel
VDS = -15 V, VGS = -10 V, ID = -2.1A
N Channel
11
12
18
18
8
VDD = 15 V, RL = 15
ID= 1A, VGEN = 10V, Rg = 6
12
11
Rise Time
P-Channel
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
12
14
7
18
21
11
12
80
80
ns
Turn Off Delay Time
td( off)
VDD = -15 V, RL = 15
ID= -1 A, VGEN = -10 V, Rg = 6
Fall Time
tf
8
40
40
IF =0.9 A, di/dt = 100 A/
IF = -0.9 A, di/dt = 100 A/
s
Source-Drain Reverse Recovery Time
trr
s
* Pulse test; pulse width 300 s, duty cycle 2%.
2
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