KI6968BEDQ [KEXIN]
Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection; 双N沟道2.5 -V （ GS ） MOSFET漏极常见， ESD保护
| 型号： | KI6968BEDQ |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection |
| 文件： | 总2页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
Dual N-Channel 2.5-V (G-S) MOSFET
Common Drain, ESD Protection
KI6968BEDQ(SI6968BEDQ)
TSSOP-8
Unit: mm
Features
VDS=20V,rDS(on)=0.022 @VGS=4.5V,ID=6.5A
VDS=20V,rDS(on)=0.030 @VGS=2.5V,ID=5.5A
N-Channel
N-Channel
* Typical value by design
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
VDS
10 secs
Steady State
20
12
Unit
V
Gate-Source Voltage
VGS
6.5
5.5
5.2
3.5
TA = 25
Continuous Drain Current*
ID
TA = 70
A
Pulsed Drain Current
30
IDM
IS
Continuous Source Current *
1.5
1.5
1.0
1.0
Maximum Power Dissipation
TA = 25
TA = 70
PD
W
0.96
0.64
Operating Junction and Storage Temperature Range
Parameter
-55 to 150
TJ, Tstg
Symbol
Typ
72
Max
83
Unit
/W
Maximum Junction-to-Ambient*
t
10 sec
RthJA
RthJF
Steady-State
Steady-State
100
55
120
70
Maximum Junction-to-Foot (Drain)
* Surface Mounted on FR4 Board, t 10 sec.
1
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SMD Type
MOSFET
KI6968BEDQ(SI6968BEDQ)
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Symbol
VGS(th) VDS = VGS, ID = 250 ìA
IGSS
Testconditons
Min
0.6
Typ
Max
1.6
200
1
Unit
V
nA
A
VDS = 0 V, VGS =
4.5 V
VDS = 16 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Current*
IDSS
25
VDS = 16 V, VGS = 0 V, TJ = 70
A
ID(on)
rDS(on)
30
A
VDS
5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 6.5 A
VGS = 2.5 V, ID = 5.5 A
VDS = 10 V, ID = 6.5 A
0.0165 0.022
Drain-Source On-State Resistance
0.023
30
0.030
Forward Transconductance*
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
gfs
Qg
S
12
18
nC
nC
nC
ns
ns
ns
ns
V
Qgs
Qgd
td(on)
tr
VDS = 10V, VGS = 4.5V, ID = 6.5A
2.2
3.6
245
330
860
510
0.71
365
495
1300
765
1.2
VDD = 10 V, RL = 10
Turn-Off Delay Time
Fall Time
td(off)
tf
ID = 1 A, VGEN = 4.5V, RG = 6
Schottky Diode Forward Voltage*
VSD
2%.
IS = 1.5 A, VGS = 0 V
* Pulse test; pulse width
300 s, duty cycle
2
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