KO8822 [KEXIN]
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor; 常见的漏双N沟道增强型场效应晶体管
| 型号： | KO8822 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
KO8822
TSSOP-8
■ Features
Unit: mm
● VDS (V) = 20V
● ID = 7A (VGS=10V)
● RDS(ON) ＜ 21mΩ (VGS = 10V)
● RDS(ON) ＜ 24mΩ (VGS = 4.5V)
● RDS(ON) ＜ 32mΩ (VGS = 2.5V)
● RDS(ON) ＜ 50mΩ (VGS = 1.8V)
D1
D2
1
2
3
4
8
7
6
5
D1/D2
S1
D1/D2
S2
S2
S1
G1
G1
G2
G2
S2
S1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Symbol
VDS
Rating
20
Unit
V
Gate-Source Voltage
VGS
V
±12
7
Continuous Drain Current *1
TA=25℃
TA=70℃
ID
A
5.7
Pulsed Drain Current *2
Power Dissipation *1 TA=25℃
TA=70℃
IDM
PD
30
1.5
W
0.96
83
Maximum Junction-to-Ambient *1
Maximum Junction-to-Ambient *1
t ≤ 10s
Steady-State
RθJA
℃/W
130
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
℃
*1The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25℃
*2 Repetitive rating, pulse width limited by junction temperature.
1
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SMD Type
MOSFET
KO8822
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Min
20
Typ Max
Unit
V
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
VDS=16V, VGS=0V
VDS=16V, VGS=0V ,TJ=55℃
VDS=0V, VGS=±10V
VDS=VGS ID=250μA
VGS=4.5V, VDS=5V
VGS=10V, ID=7A
1
5
Zero Gate Voltage Drain Current
IDSS
μA
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
IGSS
VGS(th)
ID(ON)
nA
V
±100
0.5
30
0.8
1
A
16.5
23
21
28
24
32
50
VGS=4.5V, ID=7A
VGS=4.5V, ID=6.6A
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=2A
VDS=5V, ID=7A
TJ=125℃
19
Static Drain-Source On-Resistance
RDS(ON)
mΩ
25
36
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
Rg
24
S
pF
Ω
630
164
137
1.5
9.3
0.6
3.6
5.7
11.5
31.5
9.7
15.2
6.3
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS= =10V, ID=7A
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Qg
nC
Gate Source Charge
Qgs
Qgd
tD(on)
tr
Gate Drain Charge
Turn-On DelayTime
ns
ns
ns
ns
ns
nC
A
Turn-On Rise Time
VGS=5V, VDS=10V, RL=1.4Ω,RGEN=3Ω
Turn-Off DelayTime
tD(off)
tf
Turn-Off FallTime
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
trr
IF=7A, dI/dt=100A/μs
IF=7A, dI/dt=100A/μs
Qrr
IS
2.5
1
VSD
IS=1A,VGS=0V
0.7
V
2
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