KPA1790 [KEXIN]
MOS Field Effect Transistor; MOS场效应
| 型号： | KPA1790 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Field Effect Transistor |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
MOS Field Effect Transistor
KPA1790
Features
Dual chip type
Low on-state resistance
N-channel RDS(on)1 = 0.12 TYP. (VGS = 10 V, ID = 0.5 A)
RDS(on)2 = 1.19 TYP. (VGS = 4 V, ID = 0.5 A)
P-channel RDS(on)1 = 0.45 TYP. (VGS = -10 V, ID = -0.35 A)
RDS(on)2 = 0.74 TYP. (VGS = -4 V, ID = -0.35 A)
Low input capacitance
N-channel Ciss = 180 pF TYP.
P-channel Ciss = 230 pF TYP.
Built-in G-S protection diode
Small and surface mount package
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Symbol
N-Channel
P- Channel
Unit
V
VDSS
VGSS
ID(DC)
ID(pulse)
PT
60
-60
20
V
20
A
1.0
4.0
0.7
2.8
Drain Current (pulse) *1
A
1.7
2
Total Power Dissipation (1 unit) *2
Total Power Dissipation (2 units) *2
Channel Temperature
W
W
PT
150
Tch
-55 to +150
Storage Temperature
Tstg
Single Avalanche Current *3
Single Avalanche Energy *3
IAS
0.5
-0.35
0.01
A
EAS
0.02
mJ
*1. PW
*2. Mounted on ceramic substrate of 2000 mm2 X 2.25 mm
*3. Starting Tch = 25 , VDD = 30 V, RG = 25
10 s, Duty Cycle
1%
, VGS = 20
0 V
1
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SMD Type
IC
KPA1790
Electrical Characteristics Ta = 25
Testconditons
Parameter
Symbol
IDSS
Min
Typ
Max
10
Unit
A
VDS = 60 V, VGS = 0 V
VDS = -60V, VGS = 0 V
VGS = 16 V, VDS = 0 V
VGS = 16 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = -10 V, ID = -1 mA
VDS = 10 V, ID = 0.5 A
VDS = -10 V, ID = -0.35A
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
Zero Gate Voltage Drain Current
Gate Leakage Current
-10
10
IGSS
VGS(off)
| yfs |
A
V
10
1.0
-1.0
1.0
5.0
1.7
-1.7
1.7
2.5
-2.5
Gate Cut-off Voltage
Forward Transfer Admittance
S
RDS(on)1 VGS = 10 V, ID = 0.5 A
RDS(on)2 VGS = 4 V, ID = 0.5 A
RDS(on)1 VGS = -10 V, ID = -0.35 A
RDS(on)2 VGS = -4 V, ID = -0.35 A
0.12 0.26
0.19 0.34
N-Ch
Drain to Source On-state Resistance
0.45
0.74
180
230
100
100
35
0.6
1.1
P- Ch
N-Channel
Ciss
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
Input Capacitance
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 10 V,VGS = 0 V,f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
P- Channel
VDS = -10 V,VGS = 0 V,f = 1 MHz
Crss
25
N-Channel
1
td(on)
1.9
1.4
1.7
23
VDD = 30 V, ID =0.5 A,VGS = 10 V
RG = 10
tr
P- Channel
Turn-off Delay Time
Fall Time
td(off)
30
VDD = -30 V, ID = -0.35 A,VGS = -10 V
17
RG = 10
tf
15
N-Channel
QG
8
Total Gate Charge
ID = 1.0 A,VDD = 48 V,VGS = 10 V
7.6
1
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
QGS
P- Channel
1
ID = -0.7 A,VDD = -48 V,VGS = -10 V
QGD
3.5
2
IF = 1.0 A, VGS = 0 V
VF(S-D)
IF = 0.7 A, VGS = 0 V
0.75
0.85
30
N-Channel
trr
ns
nC
58
IF = 1.0A, VGS = 0 V,di/dt = 100 A/
s
s
P-Channel
33
Qrr
130
IF = 0.7A, VGS = 0 V,di/dt = 100 A/
2
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