KPA2790GR [KEXIN]
MOS Field Effect Transistor; MOS场效应
| 型号： | KPA2790GR |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Field Effect Transistor |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
MOS Field Effect Transistor
KPA2790GR
Features
Low on-state resistance
N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A)
RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A)
P-channel RDS(on)1 = 60 m MAX. (VGS = -10 V, ID = -3 A)
RDS(on)2 = 80 m MAX. (VGS = -4.5 V, ID = -3 A)
Low input capacitance
N-channel Ciss = 500 pF TYP.
P-channel Ciss = 460 pF TYP.
Built-in gate protection diode
Small and surface mount package
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Symbol
N-Channel
P- Channel
Unit
V
VDSS
VGSS
ID(DC)
ID(pulse)
PT
30
20
6
-30
20
6
V
A
Drain Current (pulse) *1
A
24
24
1.7
2
Total Power Dissipation (1 unit) *2
Total Power Dissipation (2 units) *2
Channel Temperature
W
W
PT
150
Tch
-55 to +150
Storage Temperature
Tstg
Single Avalanche Current *3
Single Avalanche Energy *3
IAS
6
-6
A
EAS
3.6
3.6
mJ
*1 PW
*2 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
*3 Starting Tch = 25 , VDD =1/2 X VDSS, RG = 25 , L = 100 H, VGS = VGSS
10 s, Duty Cycle
1%
0 V
1
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SMD Type
IC
KPA2790GR
Electrical Characteristics Ta = 25
Testconditons
Parameter
Symbol
Min
Typ
Max
10
Unit
VDS = 30 V, VGS = 0 V
VDS = -30 V, VGS = 0 V
VGS = 16 V, VDS = 0 V
VGS = 16 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = -10 V, ID = -1 mA
VDS = 10 V, ID = 3 A
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
Zero Gate Voltage Drain Current
IDSS
IGSS
A
A
-10
10
Gate Leakage Current
Gate Cut-off Voltage
10
1.5
-1.0
2
2.5
-2.5
VGS(off)
V
Forward Transfer Admittance
| yfs |
S
VDS = -10 V, ID = -3 A
2
RDS(on)1 VGS = 10 V, ID = 3 A
RDS(on)2 VGS = 4.5 V, ID = 3 A
RDS(on)3 VGS = 4.0 V, ID = 3 A
RDS(on)1 VGS = -10 V, ID = -3 A
RDS(on)2 VGS = -4.5 V, ID = -3 A
RDS(on)3 VGS = -4.0 V, ID = -3 A
21
28
28
40
m
N-Ch
m
m
m
m
m
34
53
Drain to Source On-state Resistance
43
60
P- Ch
58
80
65
110
N-Channel
Ciss
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
N-Ch
P- Ch
500
460
135
130
77
Input Capacitance
pF
VDS = 10 V,VGS = 0 V,f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
td(on)
tr
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
P- Channel
VDS = -10 V,VGS = 0 V,f = 1 MHz
77
N-Channel
9.2
8.5
8.8
4.8
28
VDD = 15 V, ID = 3 A,VGS = 10 V
RG = 10
P- Channel
Turn-off Delay Time
Fall Time
td(off)
tf
42
VDD = -15 V, ID = -3 A,VGS = -10 V
RG = 10
7.4
19
N-Channel
12.6
11
Total Gate Charge
QG
QGS
QGD
VF(S-D)
trr
ID = 6 A,VDD = 24 V,VGS = 10 V
1.7
1.7
3.8
3.3
0.85
0.92
18
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
P- Channel
ID = -6 A,VDD = -24 V,VGS = -10 V
IF = 6 A, VGS = 0 V
IF = 6 A, VGS = 0 V
ns
nC
21
IF = 6 A, VGS = 0 V,di/dt = 100 A/
s
11
Qrr
12
2
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