KRF7509 [KEXIN]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | KRF7509 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总3页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
HEXFET Power MOSFET
KRF7509
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
VDS
ID
N-Channel
P-Channel
Unit
V
30
2.7
2.1
21
-30
-2
Continuous Drain Current, VGS @ 10V @ Ta = 25
Continuous Drain Current, VGS @ 10V @ Ta = 70
Pulsed Drain Current *1
A
ID
-1.6
-16
IDM
1.25
0.8
10
Power Dissipation
@Ta= 25
@Ta= 70
PD
W
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
m W/
V
VGS
VGSM
20
30
Gate-to-Source Voltage Single Pulse tp<10
Peak Diode Recovery dv/dt *2
S
5.0
dv/dt
V/ns
/W
-55 to + 150
100
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *3
TJ, TSTG
R
JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD
P-Channel ISD
1.7A, di/dt
-1.2A, di/dt
120A/ s, VDD
160A/ s, VDD
V(BR)DSS, TJ
V(BR)DSS, TJ
150
150
*3 Surface mounted on FR-4 board, t
10sec.
1
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SMD Type
IC
KRF7509
Electrical Characteristics TJ = 25
Testconditons
Parameter
Symbol
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
30
VGS = 0V, ID = 250
VGS = 0V, ID = -250
A
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V(BR)DSS
V
-30
A
0.059
V/
0.039
ID = 1mA,Reference to 25
ID = -1mA,Reference to 25
VGS =10V, ID = 1.7A*1
V(BR)DSS/
TJ
0.09 0.110
0.14 0.175
0.17 0.20
0.30 0.40
RDS(on)
RDS(on)
VGS(th)
gfs
N-Ch
P-Ch
VGS = 4.5V, ID = 0.85A*1
VGS = -10V, ID = -1.2A*1
VGS = -4.5V, ID = -0.6A*1
N-Ch
P-Ch
N-Ch
1.0
VDS = VGS, ID = 250
VDS = VGS, ID = -250
A
V
-1.0
A
VDS = 10V, ID = 0.85A*1
VDS = -10V, ID = -0.6A*1
VDS = 24V, VGS = 0V
1.9
Forward Transconductance
S
P-Ch 0.92
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
VDS = -24V, VGS = 0V
1.0
-1.0
25
Drain-to-Source Leakage Current
IDSS
A
VDS = 24V, VGS = 0V, TJ = 125
VDS = -24V, VGS = 0V, TJ = 125
-25
Gate-to-Source Forward Leakage
Total Gate Charge
IGSS
VGS = 20V
100
N-Channel
7.8
7.5
1.2
1.3
2.5
2.5
4.7
9.7
10
12
11
Qg
ID = 1.7A,VDS = 24V,VGS =10V
1.8
1.9
3.8
3.7
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Qgs
Qgd
td(on)
tr
nC
P-Channel
ID = -1.2A,VDS = -24V,VGS = -10V
N-Channel
VDD = 15V,ID = 1.7A,RG = 6.1
RD=8.7
Rise Time
P-Channel
12
ns
12
VDD = -15V,ID = -1.2A,RG = 6.2
RD=12
Turn-Off Delay Time
td(off)
19
5.3
9.3
210
180
80
Fall Time
tf
N-Channel
Input Capacitance
Ciss
Coss
Crss
IS
VGS = 0V,VDS = 25V,f = 1.0MHz
Output Capacitance
pF
P-Channel
87
VGS = 0V,VDS = -25V,f = 1.0MHz
32
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
42
1.25
-1.25
21
A
ISM
-16
2
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SMD Type
IC
KRF7509
Electrical Characteristics TJ = 25
Testconditons
Parameter
Symbol
VSD
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.2
V
-1.2
TJ = 25 , IS = 1.7A, VGS = 0V*1
TJ = 25 , IS = -1.8A, VGS = 0V*1
N-Channel
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
40
30
48
37
60
45
72
55
trr
ns
TJ = 25 , IF =1.7A,di/dt = 100A/ s*1
P-Channel
Qrr
nC
TJ=25 , IF=-1.2A,di/dt=-100A/ s*1
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
3
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