KST8050S-L [KEXIN]
NPN Transistors;
| 型号： | KST8050S-L |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：1000K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
SMD Type
Transistors
NPN Transistors
KST8050S
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Collector Current: IC=0.5A
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
40
25
V
V
5
V
Collector Current -Continuous
Collector Dissipation
0.5
A
PC
0.3
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditions
Min
40
25
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter-base cut-off current
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
IC = 100uA, I E = 0
IC = 1mA , IB = 0
V
IE = 100uA, I C = 0
VCB = 40 V , IE = 0
VCE = 20 V , IB = 0
VEB = 5 V , IC = 0
V
0.1
1
A
A
0.1
400
A
VCE = 1 V , IC = 50 mA
VCE = 1 V , IC = 500 mA
120
50
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC = 500 mA , IB = 50 mA
VBE(sat) IC = 500 mA , IB = 50 mA
0.6
1.2
V
V
fT
VCE = 6 V , IC = 20 mA , f = 30 MHz
150
MHz
■ Classification of hfe(1)
Type
Range
Marking
KST8050S
200-350
KST8050S-L
120-200
KST8050S-H
144-202
KST8050S-J
300-400
J3Y
1
www.kexin.com.cn
SMD Type
SMD Type
Transistors
KST8050S
Typical Characteristics
hFE —— IC
Static Characteristic
100
80
60
40
20
0
1000
COMMON EMITTER
VCE=1V
COMMON
EMITTER
Ta=25℃
400uA
350uA
300uA
250uA
200uA
Ta=100℃
Ta=25℃
100
150uA
100uA
IB=50uA
10
1
3
10
30
100
500
0
4
8
12
16
20
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC
VBEsat ——
VCEsat —— IC
1.2
500
300
Ta=25℃
0.8
0.4
100
Ta=100℃
Ta=100℃
Ta=25℃
30
10
β=10
500
β=10
0.0
30
10
500
3
1
3
10
30
100
1
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
IC —— VBE
Cob/ Cib ——
VCB/ VEB
500
100
100
COMMON EMITTER
VCE=1V
f=1MHz
IE=0/ IC=0
Ta=25℃
Cib
30
10
30
10
Ta=25℃
Cob
Ta=100℃
3
1
3
1
0.3
0.1
0.1
0.3
1
3
10
20
0.2
0.4
0.6
0.8
1.0
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE VBE (V)
PC —— Ta
fT —— IC
400
1000
VCE=6V
Ta=25℃
300
200
100
0
100
10
10
30
100
0
25
50
75
100
125
150
COLLECTOR CURRENT IC (mA)
AMBIENT TEMPERATURE Ta (℃)
2
www.kexin.com.cn
相关型号：
KST812M3
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
KST812M3
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
KST812M4
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
KST812M4S62Z
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
KST812M4TF
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
KST812M4TI
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
KST812M4TR
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
KST812M5
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
KST812M5
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明