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KST9013_15 [KEXIN]

NPN Transistors;
KST9013_15
型号： KST9013_15
厂家： GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：

NPN Transistors
文件： 总2页 (文件大小：1017K)
中文：  中文翻译
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SMD Type  
SMD Type  
Transistors  
NPN Transistors  
KST9013  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Excellent hFE linearity  
Collector Current :IC=0.5A  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
40  
Unit  
V
V
25  
5
V
Collector Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
500  
mA  
mW  
PC  
300  
Tj  
150  
Storage Temperature  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Testconditions  
Min  
40  
25  
5
Typ  
Max  
Unit  
V
Collector - base breakdown voltage  
Collector - emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector cut - off current  
Ic= 100  
Ic= 0.1mA IB=0  
IE=100 IC=0  
A
IE=0  
V
V
A
VCB=40 V , IE=0  
0.1  
1
A
Collector cut -off current  
ICEO  
VCE=20V , IB=0  
A
Emitter cut - off current  
IEBO  
VEB= 5V , IC=0  
0.1  
400  
A
VCE=1V, IC= 50mA  
VCE=1V, IC=500mA  
IC=500 mA, IB= 50mA  
IC=500 mA, IB= 50mA  
120  
40  
DC current gain  
hFE  
Collector - emitter saturation voltage  
Base - emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
0.6  
1.2  
V
V
VCE=6V, IC= 20mA,f=30MHz  
150  
MHz  
■ Classification of hfe(1)  
Type  
Range  
Marking  
KST9013  
200-350  
KST9013-L  
120-200  
KST9013-H  
144-202  
KST9013-J  
300-400  
J3  
1
www.kexin.com.cn  
SMD Type  
SMD Type  
Transistors  
KST9013  
Typical Characteristics  
hFE —— IC  
Static Characteristic  
100  
1000  
COMMON EMITTER  
VCE=1V  
COMMON  
EMITTER  
Ta=25℃  
400uA  
350uA  
300uA  
80  
60  
40  
20  
0
Ta=100℃  
Ta=25℃  
250uA  
100  
200uA  
150uA  
100uA  
IB=50uA  
10  
1
3
10  
30  
100  
500  
0
4
8
12  
16  
20  
COLLECTOR CURRENT IC (mA)  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
IC  
VBEsat ——  
VCEsat —— IC  
1.2  
500  
300  
Ta=25℃  
0.8  
0.4  
100  
Ta=100℃  
Ta=100℃  
Ta=25℃  
30  
10  
β=10  
500  
β=10  
0.0  
30  
10  
500  
3
1
3
10  
30  
100  
1
100  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
IC —— VBE  
Cob/ Cib ——  
VCB/ VEB  
100  
100  
COMMON EMITTER  
VCE=1V  
f=1MHz  
IE=0/ IC=0  
30  
10  
Ta=25℃  
Cib  
30  
10  
Ta=100℃  
Cob  
3
1
Ta=25℃  
3
1
0.3  
0.1  
0.1  
0.3  
1
3
10  
20  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
REVERSE VOLTAGE  
V
(V)  
BASE-EMMITER VOLTAGE VBE (V)  
PC —— Ta  
fT —— IC  
1000  
400  
VCE=6V  
Ta=25℃  
300  
200  
100  
0
300  
100  
10  
10  
30  
100  
0
25  
50  
75  
100  
125  
150  
COLLECTOR CURRENT IC (mA)  
AMBIENT TEMPERATURE Ta (℃)  
2
www.kexin.com.cn  

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