KTC2026-G [KEXIN]
NPN Transistors;
| 型号： | KTC2026-G |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：1027K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIP Type
Transistors
NPN Transistors
KTC2026
Unit: mm
TO-220F
±0.20
±0.20
20
.
±0.20
2.54
8±0
■ Features
1
±0.20
0.70
φ3.
● Low saturation voltage
● Complementary to KTA1046
±0.20
2.76
1.47max
±0.20
0.50
±0.20
0.80
1. Base
2. Collector
3. Emitter
2.54typ
2.54typ
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
60
60
7
Unit
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
VCBO
VCEO
VEBO
V
Collector Current - Continuous
Base Current
I
C
3
A
I
B
0.5
2
Collector Power Dissipation
Ta= 25℃
Tc= 25℃
P
C
W
℃
25
150
Junction Temperature
TJ
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
60
60
7
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100uA， I
Ic= 50 mA，I
= 100uA， I
CB= 60 V , I
EB= 7V , I =0
E
= 0
=0
= 0
= 0
B
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=2 A, I
B
=200mA
=200mA
V
C
=2 A, I
B
1.2
1
V
BE
FE
on
V
V
CE= 5V, I
CE= 5V, I
C
=500mA
=500mA
DC current gain
h
C
100
300
Turn On Time
Storage Time
Fall Time
t
0.65
1.3
us
t
stg
t
f
0.65
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V, I
E
= 0,f=1MHz
35
30
pF
f
CE= 5V, I = 500mA
C
MHz
■ Classification of hfe
Type
KTC2026-Y
KTC2026-G
150-300
Range
100-200
1
www.kexin.com.cn
DIP Type
Transistors
NPN Transistors
KTC2026
■ Typical Characterisitics
2
www.kexin.com.cn
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