KTD1898 [KEXIN]
NPN Transistors;
| 型号： | KTD1898 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors 晶体管 |
| 文件： | 总1页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
KTD1898
1.70 0.1
■ Features
● Small Flat Package
● General Purpose Application
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
100
Collector - Emitter Voltage
Emitter - Base Voltage
80
5
1
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
I
C
A
P
C
500
mW
℃/W
RθJA
250
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
100
80
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA， I
Ic= 1 mA， I = 0
= 100μA， I
E= 0
B
5
I
E
C= 0
I
CBO
EBO
V
V
CB= 80 V , I
EB= 4V , I
E
= 0
1
1
uA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=500 mA, I
B
=20mA
=20mA
0.4
1
V
C
=500 mA, I
B
hFE
V
V
V
CE= 3V, I
C
= 500mA
= 0,f=1MHz
= 50mA , f=100MHz
70
400
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
CE= 10V, I
E
20
pF
f
C
100
MHz
■ Classification of hfe
Type
Range
Marking
KTD1898-O
70-140
ZO
KTD1898-Y
120-240
ZY
KTD1898-G
200-400
ZG
1
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