KTS1C1S250 [KEXIN]
Mesh Overlay Power MOSFET; MESH OVERLAY功率MOSFET
| 型号： | KTS1C1S250 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Mesh Overlay Power MOSFET |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
Mesh Overlay Power MOSFET
KTS1C1S250
Features
Typical RDS(on) (N-Channel)=0.9
Typical RDS(on) (N-Channel)=2.1
Gate-source zener diode
Standard outline for easy
automated surface mount assembly
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VDS
VDGR
VGS
ID
N-Channel
250
P-Channel
250
Unit
V
Drain-Source Voltage (VGS = 0)
250
250
Drain-gate Voltage (RGS = 20 k
Gate-to-Source Voltage
)
25
V
0.75
0.47
3
0.60
0.38
2.4
Continuous Drain Current, @ Tc = 25
Continuous Drain Current, @ Tc = 100
Pulsed Drain Current
A
ID
IDM
1.6
Total Dissipation at TC = 25 Single Operation
Total Dissipation at TC = 25 Dual Operation
Junction and Storage Temperature Range
Thermal Resistance Junction-ambient Max (Single Operating)
(Dual Operating)
PTOT
W
2
-65 to 150
62.5
TJ, TSTG
Rthj-amb *
/W
78
* Mounted on 0.5 in²pad of 2oz. copper.
1
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SMD Type
IC
KTS1C1S250
Electrical Characteristics Ta = 25
Testconditons
Parameter
Symbol
V(BR)DSS
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
250
250
V
V
ID = 250 A, VGS = 0
ID = 250 A, VGS = 0
Drain-source Breakdown Voltage
1
1
A
VDS = Max Rating
A
A
A
A
A
Zero Gate Voltage Drain Current (VGS = 0)
IDSS
10
10
VDS = Max Rating, TC = 125
10
10
Gate-body Leakage Current (VDS = 0)
Gate Threshold Voltage
IGSS
VGS(th)
RDS(on)
Ciss
VGS = 20V
2
2
3
3
4
V
VDS = VGS, ID = 250
VDS = VGS, ID = 250
VGS = 10V, ID = 0.40A
VGS = 10V, ID = 0.30A
A
4
V
A
0.9
2.1
325
260
51
52
24
25.5
6
1.4
2.8
Static Drain-source On Resistance
Input Capacitance
pF
pF
pF
pF
pF
pF
N-Channel
VDS = 25V, f = 1 MHz, VGS = 0
P-Channel
Output Capacitance
Coss
VDS = 25V, f = 1 MHz, VGS = 0
Reverse Transfer Capacitance
Gate Input Resistance
Crss
f=1 MHz Gate DC Bias=0 Test
Signal Level=20mV Open Drain
Rg
6
N-Channel
9
ns
ns
ns
ns
Turn-on Delay Time
Rise Time
td(on)
VDD=125V,ID=1.5A,RG=4.7 , VGS =
10V
P-Ch
N-Ch
P-Ch
12
11
22
P-Channel
tr
VDD=125V,ID=1.5A,RG=4.7
VGS=10V
,
N-Channel
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
15
16
1.9
1.4
7
20
21
nC
nC
nC
nC
nC
nC
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDD =200V, ID=1.5A,VGS = 10V
P-Channel
VDD = 200V, ID= 1.5A,VGS = 10V
7.6
31
N-Channel
Turn-off Delay Time
Fall Time
td(off)
VDD = 125V, ID = 1.5A,RG = 4.7
VGS = 10V
,
,
P-Ch
N-Ch
P-Ch
29.5
11
7
ns
ns
ns
P-Channel
tf
VDD = 200V, ID = 1.5A,RG = 4.7
VGS = 10V
N-Ch
P-Ch
N-Ch
P-Ch
0.75
0.6
3
A
A
A
A
Source-drain Current
ISD
Source-drain Current (pulsed) *1
ISDM
2.4
2
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SMD Type
IC
KTS1C1S250
Electrical Characteristics Ta = 25
Testconditons
Parameter
Symbol
Min Typ Max Unit
ISD = 3A, VGS = 0
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.5
1.5
V
V
Forward On Voltage *2
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
ISD = 3A, VGS = 0
N-Channel
127
143
450
806
7
ns
ns
nC
nC
A
ISD = 0.8A, di/dt = 100A/ s,
VDD = 50V, Tj = 150
P-Channel
Qrr
ISD = 0.60A, di/dt = 100A/ s,
VDD = 40V, Tj = 150
Igs= 500 A (Open Drain)
Reverse Recovery Curren
IRRM
11
A
Gate-Source Breakdown Voltage
BVGSO
V
25
*1 Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
*2 Pulse width limited by safe operating area
3
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