MBD770DWT1 [KEXIN]
Dual Schottky Barrier Diodes; 双肖特基势垒二极管
| 型号： | MBD770DWT1 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Dual Schottky Barrier Diodes |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Diodes
Dual Schottky Barrier Diodes
MBD110DWT1
MBD330DWT1;MBD770DWT1
SOT-363
Unit: mm
+0.1
1.3
-0.1
0.65
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
+0.05
0.1
-0.02
+0.1
0.3
-0.1
+0.1
2.1
-0.1
Absolute M axim um Ratings Ta = 25
Param eter
Sym bol
VR
Value
Unit
Vdc
m A
MBD110DW T1
7
30
Reverse Voltage
MBD330DW T1
MBD770DW T1
70
Forward Power Dissipation TA = 25
Junction Tem perature
PF
TJ
120
-55 to +125
-55 to +150
Storage Tem perature Range
Tstg
1
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SMD Type
Diodes
MBD110DWT1
MBD330DWT1;MBD770DWT1
Electrical Characteristics Ta = 25
Parameter
Symbol
VBR(R)
Conditions
Min
7.0
30
Typ
10
Max
Unit
MBD110DWT1
Reverse Breakdown Voltage
Volts
MBD330DWT1
MBD770DWT1
MBD110DWT1
MBD330DWT1
MBD770DWT1
MBD110DWT1
MBD330DWT1
MBD770DWT1
MBD110DWT1
MBD110DWT1
MBD330DWT1
IR = 10 A
70
Diode Capacitance
Total Capacitance
CT
CT
VR = 0, f = 1.0 MHz
VR = 15 Volts, f = 1.0 MHz
VR = 20 Volts, f = 1.0 MHz
VR = 3.0 V
0.88
0.9
0.5
0.02
13
1.0
1.5
pF
pF
1.0
0.25
200
200
A
nAdc
nAdc
dB
Reverse Leakage
Noise Figure
IR
VR = 25 V
VR = 35 V
9
NF
f = 1.0 GHz
6
IF = 10 mA
0.5
0.38
0.52
0.47
0.7
0.6
0.45
0.6
IF = 1.0 mAdc
IF = 10 mA
Forward Voltage
VF
Vdc
MBD770DWT1
IF = 1.0 mAdc
IF = 10 mA
0.5
1.0
Marking
Type
MBD110DWT1 MMBD330DWT1 MBD770DWT1
M4 T4 H5
Marking
2
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