MBR640CS [KEXIN]
Schottky Diodes;
| 型号： | MBR640CS |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Schottky Diodes |
| 文件： | 总2页 (文件大小：915K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Diodes
Schottky Diodes
MBR640CS~MBR6200CS
TO-252
Unit: mm
■ Features
+0.15
6.50
-0.15
+0.1
-0.1
2.30
+0.8
-0.7
+0.2
5.30
-0.2
● Low power loss, high efficiency.
0.50
● Low forwrd voltage, high current capability
● High surge capacity.
● For use in low voltage,high frequency inverters.
0.127
max
+0.1
-0.1
0.80
0.1
0.1
0.60+-
1 Base
2.3
+0.15
-0.15
4.60
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
MBR
640CS
MBR MBR MBR MBR MBR
645CS 650CS 660CS 680CS 690CS 6100CS 6150CS 6200CS
MBR
MBR
MBR
Parameter
Symbol
Unit
V
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
Maximum DC Blocking Voltage
V
RRM
RSM
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
90
63
90
0.8
100
70
150
105
150
200
140
200
V
V
DC
100
0.7
0.75
0.9
Forward Voltage @ I
F
=3A
VF
6
75
0.05
20
3
Averaged Forward Current
Peak Forward Surge Current
I
FAV
A
I
FSM
TA=25℃
Maximum DC Reverse Current Ta=25℃
Ta=100℃
I
R
mA
℃/W
℃
Typical Thermal Resistance
Junction Temperature
R
thC
175
-65 to 175
Tj
Tstg
150
Storage Temperature
-55 to 150
* 1 Measured at 1 MHz and applied reverse voltage of 4 V D.C
* 2 Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
1
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SMD Type
Diodes
Schottky Diodes
MBR640CS~MBR6200CS
■ Typical Characterisitics
10.0
= 40V
= 45-200V
8.0
6.0
4.0
2..0
0
0
20
40
60
80
100 120 140 160 180
CASE TEMPERATURE, OC
NO. OF CYCLE AT 60Hz
Fig.2- MAXIMUM NON - REPETITIVE SURGE
CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
10
10.00
40-45V
TJ
=100OC
80-100V
1.0
50-60V
TJ=
75OC
150-200V
0.1
.01
1.00
TJ=
25OC
0.10
.001
1.20
0.40
0.60
0.80
1.00
0
20 40 60 80 100 120 140
FORWARD VOLTAGE, VOLTS
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.3- TYPICAL REVERSE CHARACTERISTIC
2
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