SI2300 [KEXIN]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | SI2300 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
N-Channel Enhancement Mode Field Effect Transistor
KI2300(SI2300)
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Features
3
VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A
VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A
VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
VDS
Rating
20
Unit
V
Gate-Source Voltage
VGS
V
10
ID
3.8
A
Drain-Current
-Continuous * TJ=125
-Pulsed
IDM
15
A
Power Dissipation *
PD
1.25
100
W
/W
Thermal Resistance,Junction- to-Ambient
RthJA
Tj.Tstg
Operating Junction and Storage Temperature Range
* Surface Mounted on FR 4 Board ,t 10 sec.
-55 to 150
1
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SMD Type
MOSFET
KI2300(SI2300)
Electrical Characteristics Ta = 25
Parameter
Symbol
VDSS
IDSS
Testconditons
Min
20
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS=0V,ID=250uA
VDS=20V,VGS=0V
VGS= 10V,VDS=0V
1
uA
nA
V
IGSS
100
1.5
40
Gate Threshold Voltage *
VGS(th) VGS=VDS,ID=250uA
VGS=4.5V,ID=5.0A
0.6
0.78
32
m
Drain- Source on-state Resistance *
RDS(ON)
VGS=2.5V,ID=4.0A
VGS=1.8V,ID=1.0A
50
60
m
62
75
m
On-State Drain Current *
Forward Transconductance *
Input Capacitance
ID(ON) VDS=5V,VGS=4.5V
18
5
A
gFS
CISS
COSS
CRSS
tD(on)
tr
VDS=5V,ID=5A
S
888
144
115
31.8
14.5
50.3
31.9
16.8
2.5
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
VDS = 15V, VGS = 0V,f =1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
VDD=10V,ID=1A,VGS=4.5V,RL=10
,RGEN=6
Turn-Off Delay Time
tD(off)
tf
Fall Time
Total Gate Charge
Qg
VDS = 10V, ID = 3.5A,VGS = 4.5V
Gate-S ource Charge
Gate-Drain Charge
Qgs
Qgd
IS
5.4
Drain-Source Diode Forward Current *
Diode Forward Voltage
* Pulse Test:Pulse Width 300 ,Duty Cycle 2%
1.25
VSD
VGS=0V,IS=1.25A
0.825 1.2
V
2
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