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2SA1365 [KEXIN]

Silicon PNP Epitaxia; 硅PNP Epitaxia

2SA1365


元器件型号：	2SA1365
生产厂家：	GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述和应用：	Silicon PNP Epitaxia 硅PNP Epitaxia
PDF文件：	总1页 (文件大小：39K)
下载文档：	下载PDF数据表文档文件
型号参数：2SA1365参数

2SA1365_10

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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27 ISAHAYA

2SA1365-12-1E

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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0 MITSUBISHI

2SA1365-12-1F

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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2 MITSUBISHI

2SA1365-12-1G

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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0 MITSUBISHI

2SA1365AE

Transistor

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0 ISAHAYA

2SA1365AF

Transistor

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0 ISAHAYA

2SA1365AG

Transistor

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5 ISAHAYA

2SA1365G

Transistor

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0 ISAHAYA

2SA1365-T12-1E

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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0 MITSUBISHI

2SA1366

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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118 ISAHAYA

2SA1366

Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, PNP, Silicon, SC-59, 3 PIN

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3 MITSUBISHI

2SA1366_10

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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14 ISAHAYA

2SA1366-12-1E

Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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0 MITSUBISHI

2SA1366-12-1F

Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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0 MITSUBISHI

2SA1366D

Transistor

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0 ISAHAYA

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