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元器件品牌
2SK2110
[KEXIN]
MOS Field Effect Transistor; MOS场效应
元器件型号：
2SK2110
生产厂家：
GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述和应用：
MOS Field Effect Transistor
MOS场效应
晶体 晶体管 开关
PDF文件：
总1页 (文件大小：46K)
下载文档：
下载PDF数据表文档文件
型号参数：2SK2110参数
查看货源
2SK2111
Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
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11
TYSEMI
2SK2111
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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119
NEC
2SK2111
MOS Field Effect Transistor
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51
KEXIN
2SK2112
MOS Field Effect Transistor
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156
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54
KEXIN
2SK2112
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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114
NEC
2SK2112
Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed
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19
TYSEMI
2SK2112
Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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2
NEC
2SK2112-AZ
Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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1
NEC
2SK2113
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51
ETC
2SK2113YY
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, FET
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0
RENESAS
2SK2113YY
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel
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0
RENESAS
2SK2113YY-TL
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel
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1
RENESAS
2SK2113YY-TR
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel
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156
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0
RENESAS
2SK2113YY-UL
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, FET
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1
RENESAS
2SK2113YY-UR
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, FET
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156
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2
RENESAS
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