KB837-M [KINGBRIGHT]

Transistor Output Optocoupler, 4-Element, 5000V Isolation, ROHS COMPLIANT, DIP-12;
KB837-M
型号: KB837-M
厂家: KINGBRIGHT CORPORATION    KINGBRIGHT CORPORATION
描述:

Transistor Output Optocoupler, 4-Element, 5000V Isolation, ROHS COMPLIANT, DIP-12

输出元件 光电
文件: 总7页 (文件大小:202K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PHOTOCOUPLER  
KB837-B  
GENERAL PURPOSE  
HIGH ISOLATION VOLTAGE  
SINGLE TRANSISTOR TYPE  
PHOTOCOUPLER SERIES  
FEATURES  
1.Lead forming (gull wing) type, for surface mounting.  
2.High isolation voltage between input and output (Viso=5000 Vrms).  
3.Compact dual-in-line package  
KB837-B: 3-channel type.  
4.Recognized by UL and CUL,file NO.E225308.  
DESCRIPTION  
1.The KB837-B (3-channel) is optically coupled isolators containing a GaAS light emitting  
diode and an NPN silicon phototransistor.  
2.The lead pitch is 2.54mm.  
3.Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm.  
APPLICATIONS  
1.Computer terminals.  
2.Registers,copiers,automatic vending machines.  
3.System appliances,measuring instruments.  
4.Programmable logic controller.  
5.Signal transmission between circuits of different potentials and impedances.  
SPEC NO:DSAD1555  
APPROVED: J.LU  
REV NO: V.1  
DATE:MAY/05/2003  
DRAWN:Y.H.LI  
PAGE: 1 OF 7  
CHECKED: Tracy Deng  
PHOTOCOUPLER  
KB837-B  
*PACKAGE DIMENSIONS (UNIT:mm)  
Lead Bending Type  
TOLERANCE : ± 0.5[±0.02] UNLESS OTHERWISE NOTED.  
KB837-B  
Top View  
Internal connection  
diagram  
Ó
2.54 [0.1] 0.25  
12  
7
11  
7
12  
10  
9
8
Anode  
mark  
1
2
3
4
5
6
6
1
0.9 [0.035] 0.2  
Ó
1.2 [0.047] 0.3  
+0.0  
-0.5  
14.74 [0.580]  
10.0[0.3935]  
7.20[0.2835]  
0.96[0.038]  
1, 3, 5. Anode  
7, 9, 11. Emitter  
2, 4, 6. Cathode  
8, 10, 12. Collector  
*Absolute Maximum Ratings (Ta=25°C)  
Symbol  
Rating  
Unit  
Parameter  
Forward current  
I F  
VR  
50  
6
mA  
V
Input  
Reverse voltage  
Power dissipation  
P
70  
mW  
V
Collector-emitter voltage  
Emitter-collector voltage  
Collector current  
VC EO  
VEC O  
I C  
35  
6
V
Output  
50  
mA  
mW  
mW  
Vrms  
°C  
Collector power dissipation  
PC  
150  
Total power dissipation  
*1Isolation voltage  
Ptot  
Viso  
Topr  
Tstg  
Tsol  
200  
5000  
-30~+100  
-55~+125  
260  
Operating temperature  
Storage temperature  
*2Soldering temperature  
°C  
°C  
*1 40 to 60% RH,AC for 1 minute.  
*2 For 10 seconds.  
SPEC NO:DSAD1555  
APPROVED: J.LU  
REV NO: V.1  
CHECKED: Tracy Deng  
DATE:MAY/05/2003  
DRAWN:Y.H.LI  
PAGE: 2 OF 7  
PHOTOCOUPLER  
KB837-B  
*Electro-optical Characteristics  
Parameter  
Symbol  
Conditions  
Min.  
___  
___  
___  
___  
Typ.  
1.2  
Max.  
1.4  
Unit  
V
Forward voltage  
V
F
I
F
=20mA  
FM=0.5A  
=4V  
CE=20V,I =0mA  
Input  
Peak forward voltage  
Reverse current  
V
FM  
I
___  
___  
___  
3.0  
V
IR  
V
R
10  
µA  
nA  
10-7  
Output  
Collector dark current  
ICEO  
V
I
F
*1Current transfer ratio  
CTR  
F
=5mA,VCE=5V  
50  
___  
600  
%
Collector-emitter saturation voltage  
Cut-off frequency  
I
F
=20mA, I  
C
=1mA  
___  
___  
___  
___  
0.1  
80  
4
0.2  
___  
18  
V
CE(sat  
)
V
Transfer  
charact-  
eristics  
V
CE=5V, IC=2mA  
KHz  
f
t
t
c
R
L=100Ω,-3dB  
Rise time  
Response time  
Fall time  
µs  
µs  
r
f
V
R
CE=2V, I  
C=2mA  
L
=100Ω  
3
18  
Classification table of current transfer ratio is shown below.  
Ic  
CTR=  
X 100%  
F
I
Model No.  
KB837L-B  
KB837A-B  
KB837B-B  
KB837C-B  
KB837D-B  
KB837AB-B  
KB837BC-B  
KB837CD-B  
KB837AC-B  
KB837BD-B  
KB837AD-B  
KB837-B  
Rank mark  
CTR(%)  
L
50 to 100  
80 to 160  
A
B
C
130 to 260  
200 to 400  
300 to 600  
80 to 260  
130 to 400  
200 to 600  
80 to 400  
130 to 600  
80 to 600  
50 to 600  
D
A or B  
B or C  
C or D  
A,B or C  
B,C or D  
A,B,C or D  
L,A,B,C,D or No mark  
SPEC NO:DSAD1555  
APPROVED: J.LU  
REV NO: V.1  
DATE:MAY/05/2003  
DRAWN:Y.H.LI  
PAGE: 3 OF 7  
CHECKED: Tracy Deng  
PHOTOCOUPLER  
KB837-B  
Fig. 2 Forward Current vs.  
Forward voltage  
Fig. 1 Current Transfer Ratio vs.  
Forward Current  
Fig. 4 Relative Current Transfer Ratio  
vs. Ambient Temperature  
Fig. 3 Collector Current vs.  
Collector-emitter Voltage  
Fig. 6 Collector Dark Current vs.  
Ambient Temperature  
Fig. 5 Collector-emitter Saturation  
Voltage vs. Ambient Temperature  
SPEC NO:DSAD1555  
APPROVED: J.LU  
REV NO: V.1  
DATE:MAY/05/2003  
DRAWN:Y.H.LI  
PAGE: 4 OF 7  
CHECKED: Tracy Deng  
PHOTOCOUPLER  
KB837-B  
Fig. 7 Forward Current vs.  
Ambient Temperature  
Fig. 8 Collector Power Dissipation vs.  
Ambient Temperature  
Fig. 9 Response Time vs.  
Load Resistance  
Test Circuit for Response Time  
[
Test Circuit for Frequency Response  
Fig. 10 Frequency Response  
[
[
[
SPEC NO:DSAD1555  
APPROVED: J.LU  
REV NO: V.1  
DATE:MAY/05/2003  
DRAWN:Y.H.LI  
PAGE: 5 OF 7  
CHECKED: Tracy Deng  
PHOTOCOUPLER  
KB837-B  
Fig. 11 Collector-emitter Saturation  
Voltage vs. Forward Current  
*NOTES ON HANDLING  
1.Recommended soldering conditions (Dip soldering)  
(1) Dip soldering  
Temperature  
Time  
260°C or below (molten solder temperature)  
Less than 10 seconds.  
Cycle  
One cycle allowed to be dipped in solder including plastic mold portion.  
Flux  
Rosin flux containing small amount of chorine  
(The flux with a maximum chlorine content of 0.2 Wt % is recommended.)  
(2) Cautions  
Fluxes  
Avovid removing the residual flux with freon-based and chlorine-based cleaning solvent.  
2.Cautions regarding noise  
Be aware that power is suddenly into the componment any surge current may cause damage happen,  
even if the voltage is within the absolute maximum ratings.  
SPEC NO:DSAD1555  
APPROVED: J.LU  
REV NO: V.1  
DATE:MAY/05/2003  
DRAWN:Y.H.LI  
PAGE: 6 OF 7  
CHECKED: Tracy Deng  
PHOTOCOUPLER  
KB837-B  
NOTES ON HANDLING  
1.Recommended soldering conditions  
(1).Infrared reflow soldering  
lPeak reflow temperature  
lTime of temperature higher than 210°C  
lNumber or reflows  
235°C or below(package surface temperature)  
30 seconds or less  
Three  
lFlux  
Rosin flux containing small amount of chlorine(The  
flux with a maximum chlorine content of 0.2Wt% is  
recommended.)  
CAUTION  
Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if  
ingested.  
GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to  
dissolve them.  
RESTRICTIONS ON PRODUCT USE  
The information in this document is subject to change without notice. Before using this  
document, please confirm that this is the latest version. Not all devices / types available  
in every country.  
We are mention about our product quality stablity, semiconductor devices in general can  
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing KINGBRIGHT products, to observe  
standards of safety, and to a avoid situations in which a malfunction or failure of a  
KINGBRIGHT product could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that KINGBRIGHT products are used within  
specified operating ranges as set forth in the most recent products specifications.  
SPEC NO:DSAD1555  
APPROVED: J.LU  
REV NO: V.1  
DATE:MAY/05/2003  
DRAWN:Y.H.LI  
PAGE: 7 OF 7  
CHECKED: Tracy Deng  

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