L-32P3C [KINGBRIGHT]
Photo Transistor, ROHS COMPLIANT PACKAGE-2;
| 型号： | L-32P3C |
| 厂家： | 
KINGBRIGHT CORPORATION |
| 描述： | Photo Transistor, ROHS COMPLIANT PACKAGE-2 光电 |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHOTOTRANSISTOR
L-32P3C
Features
Description
!MECHANICALLY AND SPECTRALLY MATCHED TO
THE L34 SERIES INFRARED EMITTING LED LAMP.
!WATER CLEAR LENS.
Made with NPN silicon phototransistor chips.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subjected to change without notice.
SPEC NO: KDA0530
APPROVED:J.LU
REV NO: V.1
CHECKED:
DATE: SEP/17/2001
DRAWN:X.Q.ZHENG
PAGE: 1 OF 2
Absolute Maximum Rating at TA=25°C
Parameter
Maximum Ratings
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
30V
5V
Power Dissipation at (or below) 25°C Free Air Temperature
Operating Temperature Range
100mW
-40°C ~ +85°C
-40°C ~ +85°C
260°C
Storage Temperature Range
Lead Soldering Temperature(4mm For 5sec)
Electrical And Radiant Characteristics at TA=25°C
Symbol
VBR CEO
VBR ECO
VCE (SAT)
ICEO
Parameter
Min.
Typ.
Max.
Unit
V
Test Condiction
IC=100uA
Ee=0mW/cm2
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Collector Dark Current
30
5
-
-
-
-
-
IE=100uA
Ee=0mW/cm2
V
IC=2mA
Ee=20mW/cm2
-
0.8
100
-
V
VCE=10V
Ee=0mW/cm2
-
-
nA
us
us
TR
Rise Time (10% to 90%)
-
3
3
V
CE=5V
IC=1mA
RL=1KΩ
TF
Fall Time (90% to 10%)
-
-
VCE=5V,
Ee=1mW/cm2,
λ=940nm
I (ON)
On State Collector Current
0.1
0.5
-
mA
SPEC NO: KDA0530
APPROVED:J.LU
REV NO: V.1
CHECKED:
DATE: SEP/17/2001
DRAWN:X.Q.ZHENG
PAGE: 2 OF 2
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