KVR16N11H [KINGSTON]
8GB 2Rx8 1G x 64-Bit PC3-12800 CL11 240-Pin DIMM;
| 型号： | KVR16N11H |
| 厂家： | 
Kingston |
| 描述： | 8GB 2Rx8 1G x 64-Bit PC3-12800 CL11 240-Pin DIMM PC |
| 文件： | 总2页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Memory Module Specifications
KVR16N11H/8WP
8GB 2Rx8 1G x 64-Bit PC3-12800
CL11 240-Pin DIMM
DESCRIPTION
SPECIFICATIONS
This document describes ValueRAM's 1G x 64-bit (8GB) DDR3-
1600 CL11 SDRAM (Synchronous DRAM) 2Rx8, memory
module, based on sixteen 512M x 8-bit FBGA components. The
SPD is programmed to JEDEC standard latency DDR3-1600
timing of 11-11-11 at 1.5V. This 240-pin DIMM uses gold
contact fingers. The electrical and mechanical specifications
are as follows:
CL(IDD)
11 cycles
Row Cycle Time (tRCmin)
48.125ns (min.)
260ns (min.)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
UL Rating
35ns (min.)
94 V - 0
0o C to 85o C
-55o C to +100o C
Operating Temperature
Storage Temperature
FEATURES
• JEDEC standard 1.5V Power Supply
• VDDQ = 1.5V
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
Continued >>
Document No. 4809866A 05/10/21 Page 1
MODULE DIMENSIONS:
The product images shown are for illustration purposes only and may not be an exact representation of the product.
Kingston reserves the right to change any information at anytime without notice.
kingston.com
Document No. 4809866A Page 2
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