S35VB80 [KINGTRONICS]

SINGLE-PHASE BRIDGE RECTIFIER GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 35 Ampere;
S35VB80
型号: S35VB80
厂家: Kingtronics International Company    Kingtronics International Company
描述:

SINGLE-PHASE BRIDGE RECTIFIER GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 35 Ampere

文件: 总2页 (文件大小:361K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S35VB005 THRU  
S35VB100  
SINGLE-PHASE BRIDGE RECTIFIER GLASS PASSIVATED BRIDGE RECTIFIERS  
REVERSE VOLTAGE 50 to 1000 Volts  
FORWARD CURRENT 35 Ampere  
S35  
FEATURES  
Rating to 1000V PRV  
High efficiency  
Glass passivated chip junction  
Electrically isolated metal case for maximum heat  
Dissipation  
The plastic material has UL flammability classification 94V-0  
Electrically isolated base-2500 Vlots  
MECHANICAL DATA  
Case : Molded plastic with Heatsink internally mounted  
in the bridge encapsulation  
Polarity : As marked on Body  
Mounting : Hole for # 10 screw  
Weight : 0.70 ounces , 20 grams (terminal)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25ambient temperature unless otherwise specified ,  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load derate current by 20%  
Dimensions in inches and (millimeters)  
S35VB S35VB S35VB S35VB S35VB S35VB S35VB  
SYMBOL  
UNIT  
PARAMETER  
005  
10  
20  
40  
60  
80  
100  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RRM  
50  
100  
200  
400  
600  
800  
1000  
V
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
Maximum DC Blocking Voltage  
Maximum Average Forward  
VDC  
I(AV)  
100  
1000  
A
35.0  
400  
Rectified Current  
@Tc=Ta  
Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
A
V
I
FSM  
Maximum Forward Voltage at 17.5A DC  
VF  
1.05  
5.0  
Maximum DC Reverse Current  
atrated DC blocking voltage  
@ TJ=25  
uA  
I
R
@ TJ=125℃  
500  
660  
I2t Rating for Fusing(t<8.3ms)(Note 1)  
Typical Junction Capacitance per element (Note  
2)  
A S  
I2t  
2
pF  
CJ  
150  
/W  
RθJC  
TJ  
Typical Thermal Resistance  
Operating Temperature Range  
Storage Temperature Range  
1.4  
-55 to +150  
-55 to +150  
TSTG  
1-Measured at non-repetitive, for greater than 1ms and less than 8.3ms  
2- Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 7033 Fax: (852) 8106 7099  
1
S35VB005 THRU  
S35VB100  
RATINGS AND CHARACTERISTIC CURVES  
Note: Specifications are subject to change without notice.  
Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 7033 Fax: (852) 8106 7099  
2

相关型号:

S36

Silicon Power Rectifier
MICROSEMI

S3610

Silicon Power Rectifier
MICROSEMI

S36100

Silicon Power Rectifier
MICROSEMI

S3610E3

Rectifier Diode, 1 Phase, 1 Element, 70A, 100V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PIN
MICROSEMI

S36120

Silicon Power Rectifier
MICROSEMI

S36120E3

Rectifier Diode, 1 Phase, 1 Element, 70A, 1200V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PIN
MICROSEMI

S36140

Rectifier Diode, 1 Phase, 1 Element, 70A, 1400V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PIN
MICROSEMI

S36160

Rectifier Diode, 1 Phase, 1 Element, 70A, 1600V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PIN
MICROSEMI

S3620

Silicon Power Rectifier
MICROSEMI

S3620E3

Rectifier Diode, 1 Phase, 1 Element, 70A, 200V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PIN
MICROSEMI

S3640

Silicon Power Rectifier
MICROSEMI

S3660

Silicon Power Rectifier
MICROSEMI