EL-55L [KODENSHI]
Infrared Emitting Diodes(GaAs); 红外发射二极管（砷化镓）
| 型号： | EL-55L |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | Infrared Emitting Diodes(GaAs) |
| 文件： | 总2页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Emitting Diodes(GaAs)
K O D E N S H I
E L - 5 5 L
DIMENSIONS
(Unit : mm)
The EL- 55L is a high- power GaAs IRED mounted in a
c le a r pla s tic pa c ka ge . This LED e m its infra re d light
thro ug h two p la s tic le n s e s o n b o th s id e s o f the
package is ideally s uited for us e with VTR tape- end
s e n s o r s .
FEATURES
• C o m p a c t
• Low profile package
• L o w - c o s t
• Sidelooking plastic package
• Long- lead type
APPLICATIONS
• VTR type- end sensor
MAXIMUM RATINGS
( T a = ℃2)5
I t e m
S y m b o Rl a t i n g U n i t
R
Reverse voltage
Forward current
Pulse forward current *
Power dissipation
Operating temp.
Storage temp.
V
5
V
m A
A
F
I
5 0
1
F
I
P
1
D
P
7 5
m W
℃
T o p r .
T s t g .
T s o l .
-
-
2 5 ~ + 8 5
3 0 ~ + 8 5
2 6 0
℃
*
2
Soldering temp.
℃
*1. pulse width tw 100 μsec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
( T a = ℃2 )5
I t e m
Forward voltage
Reverse current
C a p a c i t a n c e
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
S y m b o l
F
V
R
I
C t
C o n d i t i o n s
M i n . T y p .
1 . 3
M a x .
U n i t .
F
I = 5 0 m A
1 . 5
1 0
V
μA
p F
m W / s r
n m
R
V = 5 V
f = 1 M H z
I = 2 0 m A
I = 2 0 m A
I = 2 0 m A
2 5
2 . 0
9 4 0
5 0
F
O
0 . 7
P
F
λ p
Δ λ
θ
F
n m
d e g .
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-
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- 1-
Infrared Emitting Diodes(GaAs)
E L - 5 5 L
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current vs.
Forward voltage
Radiant Pattern
- 2-
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