K402 [KODENSHI]
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting); 光耦合器（这些光电耦合器由两个砷化镓红外发光）
| 型号： | K402 |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
| 文件： | 总3页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Photocoupler
K401 • K402 • K404
These Photocouplers consist of two Gallium Arsenide Infrared Emitting
Diodes and a Silicon NPN Photo Darlington transistor per a channel.
The K401 has one channel in a 4-pin mini-flat SMD package.
The K402 has two channels in a 8-pin mini-flat SMD package.
The K404 has four channels in a 16-pin mini-flat SMD package.
FEATURES
• Mini-flat Package
• Collector-Emitter Voltage : Min.30V
• Current Transfer Ratio : Type 600%
(at IF=±1mA, VCE=2V)
• Electrical Isolation Voltage : AC3750Vrms
APPLICATIONS
• AC Signal Input
• Interface between two circuits of different potential
• Automatic Vending Machine
• Copiers, Industrial Robots
ON
(Unit : mm)
DIMENSI
K402
1
K40
8
7
5
6
4
3
2
1
4
3
1
2
Orientation Mark
3.6 0.2
Orientation Mark
7.0 0.5
7.0
0.5
8.7
0.2
0.2
5.2
5.2 0.2
0.4Min.
0.4Min.
0.4 0.1
2.54
2.54
2.54 0.25
K404
16
12
15
14
13
11
10
9
2
6
1
3
4
5
7
8
Orientation Mark
7.0 0.5
5.2 0.2
18.8
0.2
0.4Min.
2.54
2.54
1/3
Photocoupler
K401 • K402 • K404
MAXIMUM RATINGS
(Ta=25℃ )
Parameter
Symbol
IF
Rating
± 50
± 1
Unit
mA
A
Forward Current
Peak Forward Current*1
IFP
Input
Power Dissipation
PD
70
mW
℃
Junction temperature
TJ
125
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
BVCEO
BVECO
IC
30
V
5
V
Output
50
mA
mW
Vrms
℃
Collector Power Dissipation
Input to Output Isolation Voltage*2
PC
150
Viso
Tstg
Topr
Tsol
Ptot
AC3750
-55~+125
-30~+85
260
Storage Temperature
Operating Temperature
Lead Soldering Temperature*3
℃
℃
Total Power Dissipation
250
mW
*1. Input current with 100ms pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
ELECTRO-OPTICAL CHARACTERISTICS
Parameter
(Ta=25 , unless otherwise noted)
Symbol
VF
Condition
Min.
Typ.
Max.
Unit.
V
Forward Voltage
Input
-
1.15
1.30
IF= ± 10mA
Capacitance
CT
-
30
-
-
pF
V
V=0, f=1kHz
Collector-Emitter Breakdown Voltage
BVCEO
BVECO
ICEO
CCE
30
-
IC=0.5mA
Emitter-Collector Breakdown Voltage
Output
5
-
-
V
IE=0.1mA
Collector Dark Current
-
-
100
nA
pF
%
IF=0, VCE=10V
VCE=0, f=1KHz
IF= ± 1mA, VCE=2V
IF= ± 1mA, IC=2mA
V=0, f=1KHz
Capacitance
Current Transfer Ratio*4
-
10
-
-
CTR
VCE(SAT)
CIO
300
-
Collector-Emitter Saturation Voltage
-
-
-
-
-
0.8
1.2
V
Input-Output Capacitance
Coupled
5
-
-
-
-
pF
Ω
1011
90
Input-Output Isolation Resistance
RIO
RH=40~60%, V=500V
VCE=10V, RL=100
IC=10mA
Rise Time
Fall Time
tr
tf
120
*4. CTR=(IC/IF) X 100 (%)
2/3
Photocoupler
K401 • K402 • K404
Forward Current vs.
Ambient Temperature
Collector Power Dissipation vs.
Ambient Temperature
Forward Current vs.
Forward Voltage
100
80
50
40
30
20
250
200
150
100
60
40
Ta=70℃
Ta=25℃
20
0
10
0
50
0
Ta=-55℃
1.2 1.6
0.4
0.8
-20
0
20
40
60
80
100
-20
0
20
40
60
80
100
Forward Voltage VF (V)
Ambient Temperature Ta (℃ )
Collector Current vs.
Forward Current
Collector Current vs.
Collector-Emitter Voltage
Dark Current vs.
Ambient Temperature
40
30
10
Ta=25℃
Ta=25℃
VCE=2V
IF=3.5mA
40
30
20
10
1
25
20
15
10
5
IF=3.0mA
IF=2.5mA
0.1
0.01
IF=2.0mA
IF=1.5mA
PC(max.)
VCE=10V
IF=1mA
0
0.001
1
2
3
4
5
6
4
0
20
40
60
80
100
0
2
6
8
10
Collector-Emitter Voltage VCE (V)
Forward Current IF (mA)
Ambient Temperature Ta (℃ )
Switching Time Test Circuit
Response Time vs.
Load Resistance
VCC
RL
R
5000
1000
VIN
VCE=10V
IC=10mA
VO
℃
Ta=25
tf
tr
Test Circuit
100
Input
10
10
Output
10%
90%
tr
tf
0.1
0.2
0.5
1
2
0.05
Waveform
Load Resistance RL (㏀)
3/3
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