关闭背景特效

K4N35 [KODENSHI]

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting); 光耦合器（这些光电耦合器包含一个砷化镓红外发光的）

K4N35


元器件型号：	K4N35
生产厂家：	KODENSHI KOREA CORP.
描述和应用：	Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) 光耦合器（这些光电耦合器包含一个砷化镓红外发光的）光电
PDF文件：	总3页 (文件大小：159K)
下载文档：	下载PDF数据表文档文件
型号参数：K4N35参数

K4N36

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

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34 KODENSHI

K4N37

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

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34 KODENSHI

K4N38

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

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24 KODENSHI

K4N38

Transistor Output Optocoupler, 1-Element, 2500V Isolation,

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0 KODENSHI

K4N38A

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

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14 KODENSHI

K4N38A

Transistor Output Optocoupler, 1-Element, 2500V Isolation,

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0 KODENSHI

K4N51163QC-ZC

512Mbit gDDR2 SDRAM

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43 SAMSUNG

K4N51163QC-ZC25

512Mbit gDDR2 SDRAM

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42 SAMSUNG

K4N51163QC-ZC25

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84

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0 SAMSUNG

K4N51163QC-ZC250

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84

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0 SAMSUNG

K4N51163QC-ZC2A

512Mbit gDDR2 SDRAM

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25 SAMSUNG

K4N51163QC-ZC2A

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84

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0 SAMSUNG

K4N51163QC-ZC2A0

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84

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0 SAMSUNG

K4N51163QC-ZC2AT

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84

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0 SAMSUNG

K4N51163QC-ZC33

512Mbit gDDR2 SDRAM

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27 SAMSUNG

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