KDT3001A [KODENSHI]
Photo Transistor; 光电晶体管![KDT3001A](http://pdffile.icpdf.com/pdf1/p00196/img/icpdf/KDT300_1105995_icpdf.jpg)
型号: | KDT3001A |
厂家: | ![]() |
描述: | Photo Transistor |
文件: | 总3页 (文件大小:219K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AUK CORP.
Photo Transistor
Description
KDT3001A
The KDT3001A is a high-sensitivity NPN silicon phototransistor
mounted in Φ 3mm(T-1) all plastic mold type.
Pin Connection
1. Emitter
Features
Φ3mm(T-1) all plastic mold type
Colorless transparency lens
Single phototransistor output
2. Collector
Applications
Optical detectors/switch
VCR, Camcoders
Floppy disk drivers
Tape End sensor
[TA = 25
]
Absolute Maximum Ratings
Parameter
Symbol
VCEO
VECO
IC
Min.
Max.
Max.
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
-
35
6
V
V
-
-
20
75
85
85
260
㎃
㎽
PC
Collector Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature*1
-
Topr.
Tstg.
Tsol
-20
-30
-
*1 : MAX 5s
The contents of this data sheet are subject to change without advance notice for the purpose of improvement.
When using this product, would you please refer to the latest specifications.
KDT3001A
KDT3001A
Rating and Characteristic Curves
Collector current Vs.
Illuminance
Power dissipation Vs.
Ambient temperature
125
100
75
50
25
0
100
10
Vcc=10V
Ta=25℃
1
0.1
0.01
0
25
50
75
100
1
10
100
1000
10000
Ambient temperature Ta [℃]
Illuminance Ev [lx]
Dark current Vs.
Relative intensity Vs.
Wavelength
Ambient temperature
100
10
120
100
80
60
40
20
0
Ta=25℃
Vcc=10V
1
0.1
0.01
0
20
40
60
80
100
120
400
500
600
700
800
900 1000 1100
Ambient temperature, Ta [℃]
Wavelength λ [nm]
Collector current Vs.
Collector - Emitter voltage
Radiant Pattern
Angle (deg.)
5
Ta=25℃
4
3
2
1
0
Ev=500lx
Ev=400lx
Ev=300lx
Ev=200lx
Ev=100lx
0
2
4
6
8
10
Collector - Emitter voltage Vce [V]
Relative intensity (%)
The contents of this data sheet are subject to change without advance notice for the purpose of improvement.
When using this product, would you please refer to the latest specifications.
KDT3001A
[TA = 25
Unit
]
Electrical Characteristics
Parameter
Symbol
Conditions
Min.
Typ.
-
Max.
ICEO
Dark Current
Ev=0, VCE=10V
-
200
㎁
㎃
V
Ee=1mW/cm2, VCE=5V
ICEL
Collector Current
1.0
3.0
0.2
-
-
VCE(SAT)
Collector-Emitter Saturation Voltage
Spectral Sensitivity
Ev=1,000lux, IC=0.8mA
-
0.4
λ
λP
tr
-
-
400
1050
㎚
㎚
㎲
㎲
deg
Peak Sensitivity Wavelength
Switching time (Rise time)
Switching time (fall time)
Half Angle
-
-
880
2.5
4.7
±30
-
-
-
-
Vcc=10V, ICE=1mA,
RL=100Ω
tf
-
∆θ
-
-
Package Outline Dimensions
(Unit : mm)
2
1
2
1
The contents of this data sheet are subject to change without advance notice for the purpose of improvement.
When using this product, would you please refer to the latest specifications.
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