KEM5001R [KODENSHI]

Infrared Emitting Diode(GaAlAs); 红外发光二极管( GaAlAs的)
KEM5001R
型号: KEM5001R
厂家: KODENSHI KOREA CORP.    KODENSHI KOREA CORP.
描述:

Infrared Emitting Diode(GaAlAs)
红外发光二极管( GaAlAs的)

红外LED 光电 二极管
文件: 总2页 (文件大小:224K)
中文:  中文翻译
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Infrared Emitting Diode(GaAlAs)  
KEM5001R  
The KEM5001R is GaAlAs infrared emitting diode  
that is designed for high power, low forward voltage.  
This device is optimized for speed and efficiency  
at emission wavelength 870nm and has a high radiant  
efficiency over a wide range of forward current.  
[Unit : mm]  
Dimensions  
0.45  
0.80  
3.70±0.1  
Features  
2.60  
870nm wavelength  
* PIN Description  
ANODE  
Low forward voltage  
CATHODE  
High power and high reliability  
Available for pulse operating  
Surface Mountable Leadless Package  
Applications  
IR Audio and Telephone  
IR Communication  
Optical Switch  
Available for Wireless Digital Data Transmission  
[TA = 25  
]
Absolute Maximum Ratings  
Parameter  
Symbol  
PD  
Rating  
Unit  
mW  
mA  
A
Power Dissipation  
95  
IF  
50  
1
Forward Current  
IFP  
Pulse Forward Current *1  
Reverse Voltage  
VR  
5
V
Topr.  
Tstg.  
Tsol  
-25~+85  
-25~+100  
260  
Operating Temperature  
Storage Temperature  
Soldering Temperature*2  
*1. Duty ratio=1/100, pulse width=0.1ms  
*2. MAX 5sec  
[TA = 25  
Unit.  
V
]
Electro-Optical Characteristics  
Parameter  
Symbol  
Conditions  
IF=50  
Min.  
Typ.  
1.6  
-
Max.  
VF  
VR  
PO  
p
Forward Voltage  
Reverse Voltage  
Radiant intensity  
Peak Emission Wavelength  
Spectral Bandwidth 50%  
Half Angle  
-
4
13  
-
1.9  
IR=10uA  
IF=50㎃  
-
-
-
-
-
-
V
16  
/sr  
nm  
IF=20㎃  
870  
45  
IF=20㎃  
-
nm  
IF=30mA  
IF=50mA  
-
±20  
15  
deg.  
ns  
Θ1/2  
Tr  
-
Rise Time  
- 1 -  
Infrared Emitting Diode(GaAlAs)  
KEM5001R  
Forward Current  
Vs  
Forward Voltage  
Forward Current  
Vs  
Ambient Temperature  
80  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
-20  
0
20  
40  
60  
80  
100  
0
1
2
3
Ambient Temperature Ta []  
Forward Voltage [V]  
Relative Intensity  
Vs  
Wavelength  
Radiant Intensity  
Vs  
Forward current  
1.2  
1000  
100  
10  
1
0.8  
0.6  
0.4  
0.2  
0
1
600  
700  
800  
900  
1000  
1100  
1
10  
100  
1000  
10000  
Wavelength λ[nm]  
Forward Current IF [mA]  
Radiant Angle  
Angle(deg.)  
Pulse Current Vs  
Duty Ratio  
10000  
1000  
100  
[Pulse ≤100㎲ Ta=25℃]  
10  
0
1
10  
100  
Duty Ratio [%]  
- 2 -  

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