OPA8830Q [KODENSHI]

Infrared LED Chip; 红外LED芯片


型号：	OPA8830Q
厂家：	KODENSHI KOREA CORP.
描述：	Infrared LED Chip 红外LED芯片
文件：	总1页 (文件大小：99K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Infrared LED Chip

OPA8830Q

High Speed

Substrate

GaAlAs/GaAlAs

GaAlAs (N Type) Removed

1. Material

Epitaxial Layer GaAlAs (P/N Type)

N(Cathode) Side Gold Alloy

P(Anode) Side Gold Alloy

2. Electrode

Parameter Symbol Min

Typ

Max

Unit

Condition

IF=10uA

IF=30mA

IR=10uA

IF=30mA

3. Electro-Optical

Characteristics

V_F(1)

Forward Voltage

V_F(2)

1.1

1.5

1.7

V_R

P_O

λ_P

Reverse Voltage

Power

880

IF=50mA

Wavelength

∆λ

6.3

Rise Time

Fall Time

※ Note : Power is measured by Sorter E/T system with bare chip.

(a) Emission Area

(b) Bottom Area

--------------------- 10.8mil x 10.8mil

--------------------- 11.8mil x 11.8mil

4. Mechanical Data

(d) Chip Thickness

(e) Junction Height

---------------------

100um

7mil

6.3mil

(d)

(e)

(b)

(a)

(c)

P Side Electrode

N Side Electrode

AUK Corp.

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel. +82 63 839 1111 Fax. +82 63 835 8259

www.auk.co.kr

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