SI5319-H [KODENSHI]
LAMP,IRED,950NM PEAK WAVELENGTH,LED-2B;
| 型号： | SI5319-H |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | LAMP,IRED,950NM PEAK WAVELENGTH,LED-2B 光电 |
| 文件： | 总3页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SI5319-H / SI5319-H(B)
Semiconductor
IRED
Features
• Colorless transparency lens type
• φ5mm(T-13/4) all plastic mold type
• Low power consumption
• Suitable for pulse current operation
Applications
• Infrared remote control and free air transmission systems with low forward voltage and
comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
Outline Dimensions
unit : mm
4.8±0.2
7.0±0.2
1.0±0.2
0.5
23.0 M IN
1.0M IN
2.54NOM
5.8±0.2
1
2
PIN Connections
1.Anode
2.Cathode
1
SI5319-H / SI5319-H(B)
Absolute maximum ratings
Characteristic
Symbol
PD
Ratings
Unit
mW
mA
A
Power Dissipation
150
Forward Current
*1Peak Forward Current
IF
100
IFP
1
Reverse Voltage
VR
4
V
-25∼ 85
℃
Operating Temperature
Storage Temperature
*2Soldering Temperature
Topr
Tstg
Tsol
-30∼ 100
℃
260℃ for 5 seconds
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical Characteristics
Characteristic
Symbol
Test Condition
IF= 50mA
IF= 50mA
IF= 50mA
IF= 50mA
VR=4V
Min. Typ. Max.
Unit
Forward Voltage
VF
IE
-
10
-
1.2
18
1.5
-
V
mW/Sr
nm
Radiant Intensity
Peak Wavelength
Spectrum Bandwidth
Reverse Current
*3Half angle
950
50
-
λP
Δλ
-
-
nm
-
-
10
-
uA
I
R
θ1/2
IF= 50mA
-
±27
deg
*3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity
2
SI5319-V / SI5319-V(B)
Characteristic Diagrams
Fig. 1 IF - VF
Fig. 2 IE - IF
Forward Voltage VF [V]
Forward Current IF [mA]
Fig.4 Spectrum Distribution
Fig. 3 IF – Ta
Wavelength λ [nm]
Ambient Temperature Ta [℃]
Fig. 5 Radiation Diagram
Relative Radiant Intensity IE [%]
3
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