概述
数据手册SJMN65R38FM 概述
N-Channel Super Junction MOSFET
SJMN65R38FM 数据手册
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Super Junction MOSFET
N-Channel Super Junction MOSFET
Features
• Drain-Source voltage: VDS=700V (@TJ=150°C)
• Low drain-source On resistance: RDS(on)=0.34Ω (Typ .)
• Ultra low gate charge: Qg=20nC(Typ.)
• RoHS compliant device
• 100%avalanche tested
Ordering Information
G D S
Part Number
Marking
Package
TO-220FM-3L
SJMN65R38FM
SJ65R38M
TO-220FM-3L
Marking Information
Column 1: Manufacturer
Column 2: Production Information
AUK
e.g.) ◎△YMDD
◎△YMDD□
-. ◎△: Factory Management Code
SJ65R38M
-. YMDD: Date Code (Year, Month, Daily)
-. □: Package Option Code
Column 3: Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
VDSS
VGSS
650
±30
11
V
V
A
Tc=25°C
Tc=100°C
IDM
(Note 1)
Drain current (DC)
ID
7
A
(Note 1)
Drain current (Pulsed)
30
A
(Note 2)
Single pulsed avalanche energy
Power dissipation
EAS
PD
346
32
mJ
W
°C
°C
Junction temperature
TJ
150
-55~150
Storage temperature range
Tstg
* Limited only maximum j unction temperature
Rev. date: 07-AUG-17
KSD-T0O263-000
www.auk.co.kr
1 of 8
SJMN65R38FM
Thermal Characteristics
Characteristic
Symbol
Rating
Max. 3.9
Max. 62.5
Unit
Thermal resistance, junction to case
Thermal resistance, j unction to ambient
R
th(j -c)
°C/ W
R
th(j -a)
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ. Max.
Unit
Drain-source breakdown voltage
Gate threshold voltage
BVDSS
VGS(th)
ID=250uA, VGS=0
650
-
3.5
-
-
V
V
ID=250uA, VDS=VGS
VDS=650V, VGS=0V
VDS=520V, TJ=125°C
VDS=0V, VGS=±30V
VGS=10V, ID=5.5A
2.5
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
uA
uA
nA
Ω
Drain-source cut -off current
IDSS
-
10
Gate leakage current
Drain-source on-resistance
Input capacitance
IGSS
-
±100
RDS(ON)
0.34
1024
796
5
0.38
C
iss
-
-
-
-
-
-
-
-
-
-
VDS=25V, VGS=0V,
f=1MHz
Output capacitance
Coss
pF
Reverse transfer capacitance
C
rss
(Not e 3)
Tu r n -on delay time
td(on)
tr
td(off)
tf
16
14
40
5
(Not e 3)
Rise time
VDS=400V, ID=11A,
RG=25Ω
ns
(Not e 3)
Tu r n -off delay time
(Not e 3)
Fall time
(Note 4)
Total gate charge
Qg
20
6.5
6.5
VDS=480V, VGS=10V,
ID=11A
(Note 4)
Gate-source charge
Qgs
Qgd
nC
(Note 4)
Gate-drain charge
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ. Max.
Unit
Source current (DC)
IS
ISM
VSD
trr
-
-
-
-
-
-
-
11
30
1.3
-
A
A
Integral reverse diode
in the MOSFET
Source current (Pulsed)
Forward voltage
VGS=0V, IS=11A
-
V
(Note 3,4)
Reverse recovery time
Reverse recovery charge
360
3.4
ns
uC
IS=11A, VGS=0V,
dIS/ dt=100A/ us
(Note 3,4)
Qrr
-
Note:
1. Calculated continuous current based on maximum allowable j unction temperature
2. L=10mH, IAS=8A, VDD=50V, Starting TJ=25°C
3. Guaranteed by design, not subj ect to production testing
4. Pulse test: Pulse width≤300us, Duty cycle≤2%
Rev. date: 07-AUG-17
KSD-T0O263-000
www.auk.co.kr
2 of 8
SJMN65R38FM
Typical Electrical Characteristics Curves
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transf e r Characteristics
Fig. 4 Body Diode Forward Voltage Variation
with Source Current
Fig.3 On-Resistance Variation with Drain Current
and Gate Voltage
Fig. 5 Typical Capacitance Characteristics
Fig. 6 Typical Total Gate Charge Characteristics
Rev. date: 07-AUG-17
KSD-T0O263-000
www.auk.co.kr
3 of 8
SJMN65R38FM
Fig. 7 Breakdown Voltage Variation vs. Temperature
Fig. 8 On-Resistance Variation vs. Temperature
Fig. 10 Maximum Safe Operating Area
Fig. 9 Maximum Drain Current vs. Case Temperature
Fig. 11 Transient Thermal Impedance
Rev. date: 07-AUG-17
KSD-T0O263-000
www.auk.co.kr
4 of 8
SJMN65R38FM
Fig. 12 Gate Charge Test Circuit & Waveform
Fig. 13 Resistive Switching Test Circuit & Waveform
Fig. 14 EAS Test Circuit & Waveform
Rev. date: 07-AUG-17
KSD-T0O263-000
www.auk.co.kr
5 of 8
SJMN65R38FM
Fig. 15 Diode Reverse Recovery Time Test Circuit & Waveform
Rev. date: 07-AUG-17
KSD-T0O263-000
www.auk.co.kr
6 of 8
SJMN65R38FM
Package Outline Dimensions
Rev. date: 07-AUG-17
KSD-T0O263-000
www.auk.co.kr
7 of 8
SJMN65R38FM
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products in
equipmentswhich require high quality and / or reliability, and in equipmentswhich could
have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
Rev. date: 07-AUG-17
KSD-T0O263-000
www.auk.co.kr
8 of 8
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