SMK0825D2 [KODENSHI]

SWITCHING REGULATOR APPLICATION; 开关稳压器的应用
SMK0825D2
型号: SMK0825D2
厂家: KODENSHI KOREA CORP.    KODENSHI KOREA CORP.
描述:

SWITCHING REGULATOR APPLICATION
开关稳压器的应用

稳压器 开关
文件: 总8页 (文件大小:328K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SMK0825D2  
Advanced N-Ch Power MOSFET  
SWITCHING REGULATOR APPLICATION  
Features  
High voltage: BVDSS=250V (Min.)  
Low gate charge: Qg=14.5nC (Typ.)  
Low drain-source On resistance: RDS(on)=0.43(Max.)  
100% avalanche tested  
D
RoHS compliant device  
Ordering Information  
G
S
Part Number  
Marking  
Package  
D2-PAK  
D2-PAK  
SMK0825D2  
SMK0825  
Marking Information  
Column 1: Manufacturer  
Column 2: Production Information  
e.g.) GFYMDD  
-. G: Option Code (H: Halogen Free)  
-. F: Factory Management Code  
-. YMDD: Date Code (Year, Month, Date)  
Column 3: Device Code  
AUK  
GFYMDD  
SMK0825  
Absolute maximum ratings (TC=25C unless otherwise noted)  
Characteristic  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
VDSS  
250  
300  
30  
8
(Note 1, 2)  
Repetitive Avalanche Voltage  
Gate-source voltage  
VDS(Avalanche)  
VGSS  
Tc=25C  
V
V
A
Drain current (DC) *  
ID  
5.2  
A
Tc=100C  
Drain current (Pulsed) *  
IDM  
EAS  
IAR  
32  
A
Single pulsed avalanche energy (Note 2)  
Repetitive avalanche current (Note 1)  
Repetitive avalanche energy (Note 1)  
Power dissipation  
356  
8
mJ  
A
EAR  
PD  
7.4  
mJ  
W
C  
C  
130  
150  
-55~150  
Junction temperature  
TJ  
Storage temperature range  
Tstg  
* Limited only maximum junction temperature  
Rev. date: 29-JUL-11  
KSD-T6S015-001  
www.auk.co.kr  
1 of 8  
SMK0825D2  
Thermal Characteristics  
Characteristic  
Symbol  
Rth(j-c)  
Rating  
Unit  
Thermal resistance, junction to case  
Thermal resistance, junction to ambient  
Max. 0.96  
Max. 62.5  
C/W  
Rth(j-a)  
Electrical Characteristics (TC=25C unless otherwise noted)  
Characteristic  
Drain-source breakdown voltage  
Gate threshold voltage  
Drain-source cut-off current  
Gate leakage current  
Symbol  
BVDSS  
VGS(th)  
IDSS  
IGSS  
RDS(ON)  
RG  
Test Condition  
Min.  
Typ. Max.  
Unit  
ID=250uA, VGS=0  
250  
-
-
-
4
V
V
ID=250uA, VDS=VGS  
VDS=250V, VGS=0V  
VDS=0V, VGS=30V  
VGS=10V, ID=4A  
2
-
-
1
uA  
nA  
-
-
100  
0.43  
10  
-
Drain-source on-resistance  
Internal gate resistance  
Forward transfer conductance (Note 3)  
Input capacitance  
-
0.35  
4
f=1MHz, VDS=0V  
VDS=10V, ID=4A  
-
gfs  
-
7
S
Ciss  
-
619  
141  
33  
15  
85  
90  
65  
14.5  
4
773  
176  
41  
35  
115  
135  
98  
18.2  
-
VDS=25V, VGS=0V,  
f=1MHz  
Output capacitance  
Coss  
Crss  
td(on)  
tr  
-
pF  
ns  
Reverse transfer capacitance  
Turn-on delay time (Note 3,4)  
Rise time (Note 3,4)  
-
11  
32  
62  
41  
-
VDD=125V, ID=8A  
RG=25  
Turn-off delay time (Note 3,4)  
Fall time (Note 3,4)  
td(off)  
tf  
Total gate charge (Note 3,4)  
Gate-source charge (Note 3,4)  
Gate-drain charge (Note 3,4)  
Qg  
VDS=200V, VGS=10V  
ID=8A  
Qgs  
-
nC  
Qgd  
-
4.5  
-
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ. Max.  
Unit  
A
Source current (DC)  
IS  
ISM  
VSD  
trr  
-
-
-
-
-
-
-
8
32  
1.4  
-
Integral reverse diode  
in the MOSFET  
Source current (Pulsed)  
Forward voltage  
A
VGS=0V, IS=8A  
-
V
Reverse recovery time (Note 3,4)  
Reverse recovery charge (Note 3,4)  
Note:  
178  
1.16  
ns  
uC  
IS=8A, VGS=0V  
dIF/dt=100A/us  
Qrr  
-
1. Repeated rating: Pulse width limited by maximum junction temperature  
2. L=8.9mH, IAS=8A, VDD=50V, RG=25, Starting TJ=25C  
3. Pulse test: Pulse width300us, Duty cycle2%  
4. Essentially independent of operating temperature typical characteristics  
Rev. date: 29-JUL-11  
KSD-T6S015-001  
www.auk.co.kr  
2 of 8  
SMK0825D2  
Electrical Characteristic Curves  
Fig. 1 ID - VDS  
Fig. 2 ID – VGS  
-
Fig. 3 RDS(ON) - ID  
Fig. 4 IS - VSD  
Fig. 5 Capacitance - VDS  
Fig. 6 VGS - QG  
Rev. date: 29-JUL-11  
KSD-T6S015-001  
www.auk.co.kr  
3 of 8  
SMK0825D2  
Electrical Characteristic Curves (Continue)  
Fig. 7 BVDSS - TJ  
Fig. 8 RDS(ON) - TJ  
C
C
Fig. 9 ID - TC  
Fig. 10 Safe Operating Area  
*
Rev. date: 29-JUL-11  
KSD-T6S015-001  
www.auk.co.kr  
4 of 8  
SMK0825D2  
Fig. 11 Gate Charge Test Circuit & Waveform  
Fig. 12 Resistive Switching Test Circuit & Waveform  
Fig. 13 EAS Test Circuit & Waveform  
Rev. date: 29-JUL-11  
KSD-T6S015-001  
www.auk.co.kr  
5 of 8  
SMK0825D2  
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform  
Rev. date: 29-JUL-11  
KSD-T6S015-001  
www.auk.co.kr  
6 of 8  
SMK0825D2  
Package Outline Dimensions  
Recommended Land Pattern [unit: mm]  
Rev. date: 29-JUL-11  
KSD-T6S015-001  
www.auk.co.kr  
7 of 8  
SMK0825D2  
The AUK Corp. products are intended for the use as components in general electronic  
equipment (Office and communication equipment, measuring equipment, home  
appliance, etc.).  
Please make sure that you consult with us before you use these AUK Corp. products  
in equipments which require high quality and / or reliability, and in equipments which  
could have major impact to the welfare of human life(atomic energy control, airplane,  
spaceship, transportation, combustion control, all types of safety device, etc.). AUK  
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.  
products were used in the mentioned equipments without prior consultation with AUK  
Corp..  
Specifications mentioned in this publication are subject to change without notice.  
Rev. date: 29-JUL-11  
KSD-T6S015-001  
www.auk.co.kr  
8 of 8  

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