STC4099R [KODENSHI]
TRANSISTOR,BJT,NPN,20V V(BR)CEO,20MA I(C),SOT-323;
| 型号： | STC4099R |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | TRANSISTOR,BJT,NPN,20V V(BR)CEO,20MA I(C),SOT-323 |
| 文件： | 总4页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STC4099
Semiconductor
NPN Silicon Transistor
Description
• RF amplifier
Features
• High current transition frequency
fT=550MHz(Typ.), [VCE=6V, IE=-1mA]
• Low output capacitance :
Cob=1.4pF(Typ.) [VCB=6V, IE=0]
• Low base time constant and high gain
• Excellent noise response
Ordering Information
Type NO.
Marking
Package Code
SOT-323
STC4099
E
: hFE rank
Outline Dimensions
unit : mm
2.1±0.1
1.25±0.05
1
3
2
PIN Connections
1. Base
0.1 Min.
2. Emitter
3. Collector
KST-3005-000
1
STC4099
Absolute maximum ratings
Characteristic
Ta=25°
Unit
C
Symbol
VCBO
VCEO
VEBO
IC
Ratings
30
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
V
V
20
4
V
Collector current
20
mA
mW
°C
Collector dissipation
PC
150
Junction temperature
Storage temperature range
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
Ta=25°C
Min. Typ. Max. Unit
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
IC=10µA, IE=0
30
20
4
-
-
V
IC=5mA, IB=0
-
-
V
IE=10µA, IC=0
-
-
-
V
VCB=30V, IE=0
-
0.5
0.5
240
0.3
-
µA
µA
-
Emitter cut-off current
IEBO
VEB=4V, IC=0
-
-
*
DC current gain
hFE
VCE=6V, IC=1mA
IC=10mA, IB=1mA
VCE=6V, IE=-1mA
VCB=6V, IE=0, f=1MHz
40
-
-
Collector-Emitter saturation voltage
Transition frequency
VCE(sat)
fT
-
V
-
550
1.4
MHz
pF
Collector output capacitance
Cob
-
-
* : hFE rank / R : 40~80, O : 70~140, Y : 120~240
KST-3005-000
2
STC4099
Electrical Characteristic Curves
Fig. 2 IC-VCE
Fig. 1 PC-Ta
Fig. 3 hFE-IC
Fig. 4 fT-IE
Fig. 5 Cob-VCB, Cib-VEB
Fig. 6 Yie-IC
KST-3005-000
3
STC4099
Electrical Characteristic Curves
Fig. 8 IC-Yfe
Fig. 7 IC-Yoe
Fig. 9 IC - Yre
KST-3005-000
4
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