STC6075Q [KODENSHI]

NPN Silicon Transistor; NPN硅晶体管
STC6075Q
型号: STC6075Q
厂家: KODENSHI KOREA CORP.    KODENSHI KOREA CORP.
描述:

NPN Silicon Transistor
NPN硅晶体管

晶体 晶体管
文件: 总6页 (文件大小:429K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STC6075Q  
NPN Silicon Transistor  
Descriptions  
General purpose amplifier  
PIN Connection  
High voltage application  
Features  
High collector breakdown voltage  
: VCEO = 90V  
Low collector saturation voltage  
: VCE(sat)=0.5V(MAX.)  
SOT-223  
Ordering Information  
Type No.  
Marking  
Package Code  
STC6075□  
STC6075Q  
SOT-223  
: Year & Week Code  
Absolute maximum ratings  
(Ta=25°C)  
Characteristic  
Symbol  
VCBO  
Ratings  
Unit  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
120  
90  
V
V
VCEO  
VEBO  
IC  
6
V
1.5  
3.0  
1.1  
A(DC)  
A(Pulse)  
Collector current  
ICP*  
PC  
Collector power dissipation  
W
**  
1.5  
150  
PC  
Junction temperature  
Storage temperature  
TJ  
°C  
°C  
Tstg  
-55~150  
* : Single pulse, tp= 300 ㎲  
** : When mounted on ceramic substrate(250 ㎟×0.8t)  
KSD-T5A006-000  
1
STC6075Q  
Electrical Characteristics  
(Ta=25°C)  
Characteristic  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Test Condition  
IC=100μA, IE=0  
Min. Typ. Max. Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
120  
90  
6
-
-
-
-
-
-
-
-
V
V
IC=1mA, IB=0  
IE=100μA, IC=0  
-
V
VCB=90V, IE=0  
-
0.1  
0.1  
400  
0.5  
1.5  
-
-
Emitter cut-off current  
IEBO  
VEB=4V, IC=0  
-
1)  
DC current gain  
200  
hFE  
VCE=5V, IC= 30 ㎃  
IC=500 , IB=50 ㎃  
IC=500 , IB=50 ㎃  
VCE=5V, IC= 50 ㎃  
VCB=10V, IE=0, f=1 ㎒  
2)  
Collector-Emitter saturation voltage  
Base-Emitter saturation voltage  
Transition frequency  
V
VCE(sat)  
2)  
-
-
-
-
V
VBE(sat)  
fT  
170  
10  
Collector output capacitance  
Cob  
-
* Note 1) hFE Rank : 200~400 only  
* Note 2) Pulse Tester : Pulse Width 300μs, Duty Cycle 2.0%  
KSD-T5A006-000  
2
STC6075Q  
Electrical Characteristic Curves  
Fig. 1 PC - Ta  
Fig. 2 IC - VBE  
Fig. 3 VCE(sat) - IC  
Fig. 4 IC - VCE  
Fig. 5 IC - VCE  
Fig. 6 hFE- C  
I
KSD-T5A006-000  
3
STC6075Q  
Electrical Characteristic Curves  
Fig. 7 hFE- C  
I
Fig. 8 hFE-IC  
Fig. 10 fT - IC  
Fig. 9 Cob - VCB  
Fig. 11 Safe Operating Area  
KSD-T5A006-000  
4
STC6075Q  
Outline Dimension  
Recommend PCB solder land [Unit: mm]  
KSD-T5A006-000  
5
STC6075Q  
The AUK Corp. products are intended for the use as components in general electronic  
equipment (Office and communication equipment, measuring equipment, home  
appliance, etc.).  
Please make sure that you consult with us before you use these AUK Corp. products  
in equipments which require high quality and / or reliability, and in equipments which  
could have major impact to the welfare of human life(atomic energy control, airplane,  
spaceship, transportation, combustion control, all types of safety device, etc.). AUK  
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.  
products were used in the mentioned equipments without prior consultation with AUK  
Corp..  
Specifications mentioned in this publication are subject to change without notice.  
KSD-T5A006-000  
6

相关型号:

STC6105

Power Supply Supervisor + Regulator + PWM
SUNTAC

STC62WV1024

VERY LOW POWER VOLTAGE CMOS SRAM
ETC

STC62WV1024DC

VERY LOW POWER VOLTAGE CMOS SRAM
ETC

STC62WV1024DC-55

VERY LOW POWER VOLTAGE CMOS SRAM
ETC

STC62WV1024DC-70

VERY LOW POWER VOLTAGE CMOS SRAM
ETC

STC62WV1024DCG55

VERY LOW POWER VOLTAGE CMOS SRAM
ETC

STC62WV1024DCG70

VERY LOW POWER VOLTAGE CMOS SRAM
ETC

STC62WV1024DCP55

VERY LOW POWER VOLTAGE CMOS SRAM
ETC

STC62WV1024DCP70

VERY LOW POWER VOLTAGE CMOS SRAM
ETC

STC62WV1024DI

VERY LOW POWER VOLTAGE CMOS SRAM
ETC

STC62WV1024DI-55

VERY LOW POWER VOLTAGE CMOS SRAM
ETC

STC62WV1024DI-70

VERY LOW POWER VOLTAGE CMOS SRAM
ETC