STS539Y [KODENSHI]
TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),TO-92;
| 型号： | STS539Y |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),TO-92 |
| 文件： | 总3页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS539
Semiconductor
PNP Silicon Transistor
Description
· Low Frequency Amplifier
Features
· Low collector saturation voltage : VCE(sat)=0.5V(Max.)
· Low output capacitance : Cob=6pF(Typ.)
· Complementary pair with STS815
Ordering Information
Type NO.
Marking
Package Code
TO-92
STS539
STS539
Outline Dimensions
unit : mm
PIN Connections
1. Emitter
2. Base
3. Collector
KST-9102-000
1
STS539
Absolute maximum ratings
Characteristic
(Ta=25
Unit
V
° C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-60
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
-45
V
-5
V
-200
625
mA
mW
°C
Collector dissipation
Junction temperature
Storage temperature
PC
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
(Ta=25
° C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
IC=-100mA, IE=0
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
BVCBO
BVCEO
BVEBO
ICBO
-60
-45
-5
-
-
-
V
V
IC=-10mA, IB=0
-
-
IE=-10mA, IC=0
-
-
-
V
mA
VCB=-45V, IE=0
-0.1
-0.1
240
-0.9
-0.5
-1.2
mA
-
Emitter cut-off current
IEBO
VEB=-3V, IC=0
-
-
*
DC current gain
hFE
VCE=-1V, IC=-50mA
VCE=-1V, IC=-10mA
IC=-150mA, IB=-15mA
IC=-150mA, IB=-15mA
40
-0.6
-
-
Base-Emitter on voltage
VBE(on)
VCE(sat)
VBE(sat)
-0.65
-0.25
-0.9
V
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
V
-
V
* : hFE rank / R : 40 ~ 80, O : 70 ~ 140, Y : 120 ~240
KST-9102-000
2
STS539
Electrical Characteristic Curves
Fig. 2 IC - VCE
Fig. 1 PC-Ta
IB
Fig. 3 IC - VBE
Fig. 4 VCE(sat), VBE(sat) - IC
Fig. 5 Cob - VCB
Fig. 6 hFE - IC
KST-9102-000
3
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