MC145159P1 [LANSDALE]

Serial-Input PLL Frequency Synthesizer with Analog Phase Detector;
MC145159P1
型号: MC145159P1
厂家: LANSDALE SEMICONDUCTOR INC.    LANSDALE SEMICONDUCTOR INC.
描述:

Serial-Input PLL Frequency Synthesizer with Analog Phase Detector

输入元件 光电二极管
文件: 总10页 (文件大小:434K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ML145159  
Serial-Input PLL Frequency  
Synthesizer with Analog Phase  
Detector  
INTERFACES WITH DUAL–MODULUS PRESCALERS  
Legacy Device: Motorola MC145159-1  
The ML145159 has a programmable 14–bit reference  
counter, as well as fully programmable  
divide–by–N/divide–by–A counters. The counters are pro-  
grammed serially through a common data input and  
latched into the appropriate counter latch, according to the  
last data bit (control bit) entered.  
When combined with a loop filter and VCO, this device can  
provide all the remaining functions for a PLL frequency syn-  
thesizer operating up to the device's frequency limit. For high-  
er VCO frequency operations, a down mixer or a dual–modu-  
lus prescaler can be used between the VCO and the PLL.  
• Operating Temperature Range: T – 40° to 85°C  
A
• Low Power Consumption Through Use of CMOS  
Technology  
• 3.0 to 9.0 V Supply Range  
• On– or Off–Chip Reference Oscillator Operation  
• Compatible with the Serial Peripheral Interface (SPI)  
on CMOS MCUs  
Note: Lansdale lead free (Pb) product, as it  
becomes available, will be identified by a part  
number prefix change from ML to MLE.  
• ÷ R Range = 3 to 16383  
• ÷ N Range = 16 to 1023, P A Range = 0 to 127  
• High–Gain Analog Phase Detector  
• See Application Note AN969  
Page 1 of 10  
www.lansdale.com  
Issue A  
ML145159  
LANSDALE Semiconductor, Inc.  
BLOCK DIAGRAM  
÷
÷
÷
* FSO is not and cannot be used as a digital phase detector output.  
MAXIMUM RATINGS* (Voltages Referenced to V  
)
SS  
This device contains circuitry to protect the  
inputs against damage due to high static volt-  
ages or electric fields; however, it is advised that  
normal precautions be taken to avoid applica-  
tions of any voltage higher than maximum rated  
voltages to this high–impedance circuit. For  
Symbol  
Parameter  
DC Supply Voltage  
Value  
Unit  
V
DD  
– 0.5 to + 10  
V
V , V  
Input or Output Voltage (DC or Transient)  
– 0.5 to V  
DD  
+ 0.5  
V
in out  
I , I  
Input or Output Current (DC or Transient),  
per Pin  
10  
mA  
in out  
proper operation it is recommended that V and  
in  
V
be constrained to the range V  
(V or  
in  
out  
SS  
I
, I  
Supply Current, V  
DD  
or V  
SS  
Pins  
30  
500  
mA  
mW  
°C  
DD SS  
V
) V  
.
out DD  
P
D
Power Dissipation, per Package  
Storage Temperature  
Unused inputs must always be tied to an  
appropriate logic voltage level (e.g., either V  
SS  
T
stg  
– 65 to + 150  
260  
or V ).  
DD  
T
L
Lead Temperature (8–Second Soldering)  
°C  
* Maximum Ratings are those values beyond which damage to the device may occur.  
Page 2 of 10  
www.lansdale.com  
Issue A  
ML145159  
LANSDALE Semiconductor, Inc.  
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V  
SS  
except I  
and I  
APD  
which are referenced to V )  
SS  
CR  
– 40°C  
25°C  
85°C  
Characteristic  
Power Supply Voltage Range  
Output Voltage  
Symbol  
V
Unit  
V
Min  
Max  
Min  
Max  
Min  
Max  
DD  
V
DD  
3
9
3
9
3
9
0 Level  
1 Level  
0 Level  
1 Level  
V
OL  
3
5
9
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
V
V
= 0 V or V  
= 0 µA  
in  
DD  
I
out  
(Except OSC  
and APD  
)
V
OH  
3
5
9
2.95  
4.95  
8.95  
2.95  
4.95  
8.95  
2.95  
4.95  
8.95  
out  
out  
Output Voltage  
V
OL  
3
5
9
0.9  
1.5  
2.7  
0.9  
1.5  
2.7  
0.9  
1.5  
2.7  
V
OSC  
out  
= 0 V or V  
V
in  
DD  
V
OH  
3
5
9
2.1  
3.5  
6.3  
2.1  
3.5  
6.3  
2.1  
3.5  
6.3  
Voltage, V  
CH  
– V  
, I  
0 µA  
V  
1.05  
V
V
APDout APDout  
Input Voltage  
0 Level  
1 Level  
V
IL  
3
5
9
0.9  
1.5  
2.7  
0.9  
1.5  
2.7  
0.9  
1.5  
2.7  
V
= 0.5 V or V  
– 0.5 V  
out  
DD  
(All Outputs Except OSC  
)
out  
V
IH  
3
5
9
2.1  
3.5  
6.3  
2.1  
3.5  
6.3  
2.1  
3.5  
6.3  
Input Voltage* — OSC  
V
V
V
in  
IL  
IH  
V
O
V
O
V
O
= 2.1 V or 0.9 V  
= 3.5 V or 1.5 V  
= 6.3 V or 2.7 V  
0 Level  
1 Level  
3
5
9
0
0
0
0
0
0
0
0
0
V
V
O
V
O
V
O
= 0.9 V or 2.1 V  
= 1.5 V or 3.5 V  
= 2.7 V or 6.3 V  
3
5
9
3.0  
5.0  
9.0  
3.0  
5.0  
9.0  
3.0  
5.0  
9.0  
Output Current — MC  
I
mA  
OH  
V
= 2.7 V  
= 4.6 V  
= 8.5 V  
Source  
Sink  
3
5
9
– 0.60  
– 0.90  
– 1.50  
– 0.50  
– 0.75  
– 1.25  
– 0.30  
– 0.50  
– 0.80  
out  
V
V
out  
out  
V
= 0.3 V  
= 0.4 V  
= 0.5 V  
I
3
5
9
1.30  
1.90  
3.80  
1.10  
1.70  
3.30  
0.66  
1.08  
2.10  
out  
OL  
V
V
out  
out  
Output Current, C , V  
= 4.5 V, R = 240 k  
I
9
9
– 90  
170  
– 110  
350  
µA  
µA  
R
CR  
R
CR  
Output Current, APD  
out  
I
APD  
R
= 240 k, V  
CH  
= 0 V, V = 4.5 V  
APDout  
O
Output Current — Other Outputs  
I
mA  
OH  
V
= 2.7 V  
= 4.6 V  
= 8.5 V  
Source  
Sink  
3
5
9
– 0.44  
– 0.64  
– 1.30  
– 0.35  
– 0.51  
– 1.00  
– 0.22  
– 0.36  
– 0.70  
out  
V
V
out  
out  
V
= 0.3 V  
= 0.4 V  
= 0.5 V  
I
3
5
9
0.44  
0.64  
1.30  
0.35  
0.51  
1.00  
0.22  
0.36  
0.70  
out  
OL  
V
V
out  
out  
Input Current — Data, CLK, ENB  
I
I
9
9
2
0.3  
50  
2
0.1  
25  
2
1.0  
22  
µA  
µA  
pF  
pF  
µA  
in  
Input Current — f , OSC  
in  
in  
in  
Input Capacitance  
C
10  
10  
10  
in  
Three–State Output Capacitance — FSO  
C
10  
10  
10  
out  
DD  
Quiescent Current  
I
3
5
9
800  
1200  
1600  
800  
1200  
1600  
1600  
2400  
3200  
V
= 0 V or V  
= 0 µA  
in  
DD  
I
out  
Three–State Leakage Current, V  
= 0 V or 9 V  
I
9
0.3  
0.1  
3.0  
µA  
out  
OZ  
* DC coupled square wave.  
Page 3 of 10  
www.lansdale.com  
Issue A  
ML145159  
LANSDALE Semiconductor, Inc.  
SWITCHING CHARACTERISTICS (T = 25°C, C = 50 pF)  
A
L
Figure  
No.  
Characteristic  
Symbol  
V
DD  
Min  
Max  
Unit  
Output Rise Time — MC  
4, 9  
4, 9  
4, 9  
5, 9  
6
t
3
5
9
115  
60  
40  
ns  
TLH  
Output Fall Time — MC  
t
3
5
9
60  
34  
30  
ns  
ns  
ns  
ns  
THL  
Output Rise and Fall Time — LD and SR  
out  
t
t
,
3
5
9
140  
80  
60  
TLH  
THL  
Propagation Delay Time — f to MC  
in  
t
t
,
3
5
9
125  
80  
50  
PLH  
PHL  
Setup Times — Data to CLK  
CLK to ENB  
t
su  
3
5
9
30  
20  
18  
3
5
9
70  
32  
25  
Hold Time — CLK to Data  
Recovery Time — ENB to CLK  
6
6
7
8
t
3
5
9
12  
12  
15  
ns  
ns  
µs  
ns  
h
t
3
5
9
5
10  
20  
rec  
Input Rise and Fall Times — CLK, OSC , f  
in in  
t , t  
r f  
3
5
9
5
2
0.5  
Input Pulse Width — ENB and CLK  
t
w
3
5
9
40  
35  
25  
NOTE: Refer to the graphs and text in application note AN969 for maximum frequency information.  
Page 4 of 10  
www.lansdale.com  
Issue A  
ML145159  
LANSDALE Semiconductor, Inc.  
PIN DESCRIPTIONS  
COMPONENT PINS  
INPUT PINS  
C
R
OSC , OSC  
in out  
Ramp Capacitor (PDIP, SOG – Pin 15, SSOP Pin 20)  
Oscillator Input and Oscillator Output (PDIP, SOG –  
Pins 2, 3; SSOP Pins 7, 8)  
The capacitor connected from this pin to V ’ is charged lin-  
SS  
early, at a rate determined by R . The voltage on this capacitor  
R
is proportional to the phase difference of the frequencies pres-  
ent at the internal phase detector inputs. A polystyrene or  
These pins form an on–chip reference oscillator when con-  
nected to terminals of an external parallel–resonant crystal.  
Frequency–setting capacitors of appropriate value must be con- mylar capacitor is recommended.  
nected from OSC to V and OSC toV . OSC may  
in SS out SS in  
also serve as input for an externally–generated reference sig-  
R
R
Ramp Current Bias Resistor (PDIP, SOG – Pin 20,  
SSOP Pin 5)  
nal. This signal will typically be AC coupled to OSC , but for  
larger amplitude signals (standard CMOS logic levels), DC  
coupling may also be used. In the external reference mode, no  
in  
A resistor connected from this pin to V ’ determines the  
SS  
rate at which the ramp capacitor is charged, thereby affecting  
the phase detector gain (see Figure 2).  
connection is required to OSC  
.
out  
f
in  
C
H
Frequency Input (PDIP, SOG – Pin 10, SSOP Pin 15)  
Hold Capacitor (PDIP, SOG – Pin 18, SSOP Pin 3)  
Input to the positive edge triggered divide–by–N and di-  
The charge stored on the ramp capacitor is transferred to the  
vide–by–A counters. f is typically derived from a dual–mod-  
in  
capacitor connected from this pin to either V ’ or V ’. The  
DD SS  
ulus prescaler and is AC coupled. This input has an inverter  
biased in the linear region to allow use with AC coupled sig-  
nals as low as 500 mV peak–to–peak or direct coupled signals  
ratio of C to C should be large enough to have no effect on  
R
H
the phase detector gain (C > 10 C ). A low–leakage capaci-  
R
H
tor should be used.  
swinging from V  
to V .  
DD  
SS  
R
O
DATA  
Output Bias Current Resistor (PDIP, SOG – Pin 1,  
SSOP Pin 6)  
Serial Data Input (PDIP, SOG – Pin 12, SSOP Pin 17)  
Counter and control information is shifted into this input.  
The last data bit entered goes into the one–bit control shift reg-  
ister. A logic 1 allows the reference counter information to be  
loaded into its 14–bit latch when ENB goes high. A logic 0  
entered as the control bit disables the reference counter latch.  
The divide–by–A/divide–by–N counter latch is loaded, regard-  
less of the contents of the control register, when ENB goes  
high. The data entry format is shown in Figure 1.  
A resistor connected from this pin to V ’ biases the output  
SS  
N–Channel transistor, thereby setting a current sink on the ana-  
log phase detector output. This resistor adjusts the APD  
current (see Figure 3).  
bias  
out  
OUTPUT PINS  
APD  
out  
Analog Phase Detector Output (PDIP, SOG – Pin 17,  
SSOP Pin 2)  
ENB  
Transparent Latch Enable (PDIP, SOG – Pin 13,  
SSOP Pin 18)  
This output produces a voltage that controls an external  
VCO. The voltage range of this output (V  
= + 9 V) is from  
A logic high on this input allows data to be entered into the  
divide–by–A/divide–by–N latch and, if the control bit is high,  
into the reference counter latch. Counter programming is unaf-  
fected when ENB is low. ENB should be kept normally low  
and pulsed high to transfer data to the latches.  
DD  
below + 0.5 V to + 8 V or more. The source impedance of this  
output is the equivalent of a source follower with an externally  
variable source resistor. The source resistor depends upon the  
output bias current controlled by the output bias current resis-  
tor, R . The bias current is adjustable from 0.01 mA to 0.5  
O
CLK  
mA. The output voltage is not more than 1.05 V below the  
sampled point on the ramp. With a constant sample of the  
ramp voltage at 9 V and the hold capacitor of 50 pF, the instan-  
taneous output ripple is about 5 mV peak–to–peak.  
Shift Register Clock (PDIP, SOG – Pin 11, SSOP Pin 16)  
A low–to–high transition on this input shifts data from the  
serial data input into the shift registers.  
Figure 1. Data Entry Format  
Page 5 of 10  
www.lansdale.com  
Issue A  
ML145159  
LANSDALE Semiconductor, Inc.  
CHARGE  
represent the dual modulus prescaler divide values respectively  
for high and low modulus control levels, N is the number pro-  
grammed into the divide–by–N counter, and A is the number  
programmed into the divide–by–A counter.  
Ramp Charge Indicator (PDIP, SOG – Pin 4,  
SSOP Pin 9)  
This output is high from the time f goes high to the time  
R
f goes high (f and f are the frequencies at the phase detec-  
SRout  
V
R
V
tor inputs). This high voltage indicates that the ramp capacitor,  
Shift Register Output (PDIP, SOG – Pin 14,  
SSOP Pin 19)  
C , is being charged.  
R
FSO  
This pin is the non–inverted output of the last stage of the  
32–bit serial data shift register. It is not latched by the ENB  
Three–State Frequency Steering Output (PDIP,  
SOG –Pin 6, SSOP Pin 11)  
line. If unused, SR  
should be floated.  
out  
If the counted down input frequency on f is higher than the  
in  
POWER SUPPLY  
counted down reference frequency of OSC , this output goes  
in  
low. If the counted down VCO frequency is lower than that of  
V
DD  
the counted down OSC , this output goes high.  
in  
Positive Power Supply (PDIP, SOG – Pin 5, SSOP Pin 10)  
The repetition rate of the frequency steering output pulses is  
approximately equal to the difference of the frequencies of the  
Positive power supply input for all sections of the device  
except the analog phase detector. V  
and V ’ should be  
DD  
DD  
two counted down inputs from the VCO and OSC . See  
in  
powered up at the same time to avoid damage to the  
ML145159. V must be tied to the same potential asV ’.  
Application Note AN969 for further information.  
DD DD  
LD  
V
SS  
Lock Detector Indicator (PDIP, SOG – Pin 9,  
SSOP Pin 14)  
Negative Power Supply (PDIP, SOG – Pin 7,  
SSOP Pin 12)  
This output is high during lock and goes low to indicate a  
non–lock condition. The frequency and duration of the  
non–lock pulses will be the same as either polarity of the fre-  
quency steering output.  
Circuit ground for all sections of the ML145159 except the  
analog phase detector. V must be tied to the same potential  
as V ’.  
SS  
SS  
V
SS  
MC  
Analog Phase Detector Circuit Ground (PDIP, SOG –  
Pin 16, SSOP Pin 1)  
Dual Modulus Prescaler Control (PDIP, SOG – Pin 8,  
SSOP Pin 13)  
Separate power supply and ground inputs are provided to  
help reduce the effects in the analog section of noise coming  
from the digital sections of this device and the surrounding cir-  
cuitry.  
The modulus control level is low at the beginning of a count  
cycle and remains low until the divide–by–A counter has  
counted down from its programmed value. At that time, the  
modulus control goes high and remains high until the di-  
vide–by–N counter has counted the rest of the way down from  
its programmed value (N – A additional counts since both  
divide–by–N and divide–by–A are counting down during the  
first portion of the cycle). Modulus control is then set back  
low, the counters preset to their respective programmed values,  
and the above sequence repeated. This provides for a total pro-  
grammable divide value of NT = N • P + A, where P and P + 1  
V
DD  
Analog Power Supply (PDIP, SOG – Pin 19, SSOP Pin 4)  
Separate power supply and ground inputs are provided to  
help reduce the effects in the analog section of noise coming  
from the digital sections of this device and the surrounding cir-  
cuitry.  
Page 6 of 10  
www.lansdale.com  
Issue A  
ML145159  
LANSDALE Semiconductor, Inc.  
µ
Figure 2. Charge Current vs Ramp Resistance  
Figure 3. APD  
Bias Current vs Output Resistance  
out  
DESIGN EQUATION  
I
CHARGE  
K
φ
=
2π f C  
R R  
where  
K
= phase detector gain, I  
= reference frequency  
= ramp capacitor (in farads)  
is from Figure 2  
CHARGE  
φ
f
R
C
R
SWITCHING WAVEFORMS  
Figure 4.  
Figure 5.  
Figure 7.  
Figure 6.  
Figure 8.  
*
* Includes all probe and fixture capacitance.  
Figure 9. Test Circuit  
Page 7 of 10  
www.lansdale.com  
Issue A  
ML145159  
LANSDALE Semiconductor, Inc.  
DESIGN CONSIDERATIONS  
The oscillator can be “trimmed” on–frequency by making a  
portion or all of C1 variable. The crystal and associated com-  
CRYSTAL OSCILLATOR CONSIDERATIONS  
ponents must be located as close as possible to the OSC and  
in  
OSC  
out  
pins to minimize distortion, stray capacitance, stray  
The following options may be considered to provide a ref-  
erence frequency to Lansdales CMOS frequency synthesizers.  
inductance, and start–up stabilization time. Circuit stray capac-  
itance can also be handled by adding the appropriate stray  
Use of a Hybrid Crystal Oscillator  
value to the values for C and C . For this approach, the  
in out  
Commercially available temperature–compensated crystal  
oscillators (TCXOs) or crystal–controlled data clock oscilla-  
tors provide very stable reference frequencies. An oscillator  
capable of sinking and sourcing 50 µA at CMOS logic levels  
may be direct or DC coupled to OSC . In general, the highest  
frequency capability is obtained utilizing a direct coupled  
square wave having a rail–to–rail (V  
swing. If the oscillator does not have CMOS logic levels on the  
outputs, capacitive or AC coupling to OSC may be used.  
term C  
stray  
becomes zero in the above expression for C .  
L
Power is dissipated in the effective series resistance of the  
crystal, R , in Figure 12. The maximum drive level specified  
e
by the crystal manufacturer represents the maximum stress that  
a crystal can withstand without damaging or excessive shift in  
operating frequency. R1 in Figure 10 limits the drive level. The  
use of R1 is not necessary in most cases.  
in  
to V ) voltage  
DD  
SS  
To verify that the maximum dc supply voltage does not over-  
drive the crystal, monitor the output frequency as a function of  
in  
OSC , an unbuffered output, should be left floating.  
out  
voltage at OSC . (Care should be taken to minimize load-  
out  
For additional information about TCXOs and data clock  
oscillators, please consult the latest version of the eem  
Electronic Engineers Master Catalog, the Gold Book, or simi-  
lar publications.  
ing.) The frequency should increase very slightly as the dc sup-  
ply voltage is increased. An overdriven crystal will decrease in  
frequency or become unstable with an increase in supply volt-  
age. The operating supply voltage must be reduced or R1 must  
be increased in value if the overdriven condition exists. The  
user should note that the oscillator start–up time is proportion-  
al to the value of R1.  
Design an Off–Chip Reference  
The user may design an off–chip crystal oscillator using ICs  
specifically developed for crystal oscillator applications, such  
as the ML12061 MECL device. The reference signal from the  
MECL device is AC coupled to OSC . For large amplitude  
signals (standard CMOS logic levels), DC coupling is used.  
Through the process of supplying crystals for use with  
CMOS inverters, many crystal manufacturers have developed  
expertise in CMOS oscillator design with crystals. Discussions  
with such manufacturers can prove very helpful. See Table 1.  
in  
OSC , an unbuffered output, should be left floating. In gen-  
out  
eral, the highest frequency capability is obtained with a  
direct–coupled square wave having rail–to–rail voltage swing.  
Use of the On–Chip Oscillator Circuitry  
The on–chip amplifier (a digital inverter) along with an ap-  
propriate crystal may be used to provide a reference source fre-  
quency. A fundamental mode crystal, parallel resonant at the  
desired operating frequency, should be connected as shown in  
Figure 10.  
For V  
= 5 V, the crystal should be specified for a loading  
DD  
* May be deleted in certain cases. See text.  
capacitance, CL, which does not exceed 32 pF for frequencies  
to approximately 8 MHz, 20 pF for frequencies in the area of 8  
to 15 MHz, and 10 pF for higher frequencies. These are guide-  
lines that provide a reasonable compromise between IC capaci-  
tance, drive capability, swamping variations in stray and IC  
Figure 10. Pierce Crystal Oscillator Circuit  
input/output capacitance, and realistic C values. Assuming  
L
R1 = 0 . the shunt load capacitance, C , presented across the  
L
crystal can be estimated to be:  
Figure 11. Parasitic Capacitances of the  
Amplifier and C  
stray  
C C  
in out  
C1 C2  
C1 + C2  
C =  
L
+ C + C  
+
stray  
a
C
+ C  
in  
out  
where  
C
= 5 pF (see Figure 11)  
= 6 pF (see Figure 11)  
in  
C
out  
C = 1 pF (see Figure 11)  
a
C1 and C2 = external capacitors (see Figure 10)  
C
= the total equivalent external circuit stray  
capacitance appearing across the  
crystal terminals  
stray  
NOTE: Values are supplied by crystal manufacturer  
(parallel resonant crystal).  
Figure 12. Equivalent Crystal Networks  
Page 8 of 10  
www.lansdale.com  
Issue A  
ML145159  
LANSDALE Semiconductor, Inc.  
Table 1. Partial List of Crystal Manufacturers  
Address  
Name  
Phone  
United States Crystal Corp.  
Crystek Crystal  
Statek Corp.  
3605 McCart Ave., Ft. Worth, TX 76110  
2351 Crystal Dr., Ft. Myers, FL 33907  
512 N. Main St., Orange, CA 92668  
(817) 921–3013  
(813) 936–2109  
(714) 639–7810  
NOTE: Lansdalecannotrecommendonesupplieroveranotherandinnowaysuggeststhatthisisacomplete  
listing of crystal manufacturers.  
Control”, Electro–Technology, June, 1969.  
P. J. Ottowitz, “A Guide to Crystal Selection”, Electronic  
Design, May, 1966.  
D. Babin, “Designing Crystal Oscillators”, Machine Design,  
March 7, 1985.  
RECOMMENDED READING  
Technical Note TN–24, Statek Corp.  
Technical Note TN–7, Statek Corp.  
E. Hafner, “The Piezoelectric Crystal Unit – Definitions and  
Method of Measurement”, Proc. IEEE, Vol. 57, No. 2 Feb.,  
1969.  
D. Babin, “Guidelines for Crystal Oscillator Design”, Ma-  
chine Design, April 25, 1985.  
D. Kemper, L. Rosine, “Quartz Crystals for Frequency  
÷
÷
Figure 13. Timing Diagram for Minimum Divide Value (N = 16)  
Page 9 of 10  
www.lansdale.com  
Issue A  
ML145159  
LANSDALE Semiconductor, Inc.  
OUTLINE DIMENSIONS  
PLASTIC DIP 20 = RP  
(MC145159RP)  
CASE 738-03  
-A-  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION L TO CENTER OF LEAD WHEN  
FORMED PARALLEL.  
4. DIMENSION B DOES NOT INCLUDE MOLD  
FLASH.  
20  
1
11  
10  
B
C
L
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
1.010  
0.240  
0.150  
0.015  
1.070 25.66  
0.260  
0.180  
0.022  
-T-  
SEATING  
PLANE  
K
M
0.050 BSC  
0.050  
0.070  
F
E
N
G
J
K
L
M
N
0.100 BSC  
2.54 BSC  
0.008  
0.110  
0.015  
0.140  
0.21  
2.80  
0.38  
3.55  
G
F
J 20 PL  
0.300 BSC  
15  
0.040  
7.62 BSC  
D 20 PL  
0.25 (0.010)  
M
M
0.25 (0.010)  
T
B
0°  
°
0
0.51  
°
15°  
0.020  
1.01  
M
M
T
A
Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliabil-  
ity, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit  
described herein; neither does it convey any license under its patent rights nor the rights of others. “Typical” parameters which  
may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by the cus-  
tomer’s technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc.  
Page 10 of 10  
www.lansdale.com  
Issue A  

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