LBAS21HT3G [LEIDITECH]
HIGH VOLTAGE SWITCHING DIODE;
| 型号： | LBAS21HT3G |
| 厂家： | 
Leiditech |
| 描述： | HIGH VOLTAGE SWITCHING DIODE 高压 开关 光电二极管 |
| 文件： | 总3页 (文件大小：1098K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LBAS21HT1G
HIGH VOLTAGE
Dimensions SOD-323
SWITCHING DIODE
We declare that the material of product compliance with
•
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
•
Pin Configuration
ORDERINGINFORMATION
Device
Marking
JS
Shipping
LBAS21HT1G
3000/Tape&Reel
1
2
CATHODE
ANODE
LBAS21HT3G
10000/Tape&Reel
JS
MAXIMUMRATINGS
Rating
Symbol
VR
Value
250
Unit
Vdc
Continuous Reverse Voltage
Peak Forward Current
I F
200
mAdc
mAdc
Peak Forward Surge Current
IFM(surge)
625
THERMALCHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,*
TA = 25°C
Symbol
Max
Unit
P
D
200
mW
Derate above 25°C
1.57
635
mW/°C
°C/W
Thermal Resistance Junction to Ambient
Junction and Storage
RθJA
TJ, Tstg
–55 to+150
°C
Temperature Range
*FR–5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
Symbol
Min
Max
Unit
IR
µAdc
–
–
0.1
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
100
V(BR)
VF
250
–
Vdc
mV
Forward Voltage
(IF = 100 mAdc)
–
–
1000
1250
(IF = 200 mAdc)
I
F =1mA
f = 100 MHz)
15
20
3.8
Forward resistance
rf
I
I
F =10mA
2.5
1.1
Ω
f = 100 MHz)
f = 100 MHz)
F =100mA
1.35
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
trr
–
–
5.0
50
pF
ns
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
Rev :01.06.2014
1/3
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LBAS21HT1G
820
Ω
+10 V
2 k
0.1
µF
I
F
t
t
t
r
p
I
F
100 µH
t
rr
t
10%
90%
0.1
µ
F
DUT
50
Ω
OUTPUT
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
i
= 3.0 mA
PULSE
GENERATOR
R(REC)
I
R
V
R
OUTPUT PULSE
(I = I = 30 mA; measured
INPUT SIGNAL
F
R
at i
= 3.0 mA)
R(REC)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I ) of 30 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 30 mA.
R(peak)
Notes: 3. t
»t
rr
p
Figure 1. Recovery Time Equivalent Test Circuit
70
60
1200
1000
800
T
A
= −55°C
T
A
= 150°C
50
40
30
25°C
150°C
0.06
0.05
0.04
0.03
0.02
0.01
0
600
400
T
= 25°C
A
200
T
A
= −55°C
1
1
1
2
5
10
20
50
100 200 300
10
100
1000
FORWARD CURRENT (mA)
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
Rev :01.06.2014
2/3
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LBAS21HT1G
SOD-323 Package Outline & Dimensions
Millimeters
Nom.
Inches
Symbol
Min.
Max.
Min.
Nom.
Max.
A
A1
A3
b
0.80
0.00
0.90
0.05
1.00
0.10
0.031
0.000
0.035
0.002
0.040
0.004
0.15 REF
0.32
0.006 REF
0.012
0.25
0.089
1.60
1.15
0.08
2.30
0.40
0.177
1.80
0.010
0.003
0.062
0.045
0.003
0.090
0.016
0.007
0.070
0.053
C
0.12
0.005
D
1.70
0.066
E
1.25
1.35
0.049
L
HE
2.50
2.70
0.098
0.105
Soldering Footprint
Symbol
Millimeters
Inches
F
G
J
1.60
2.85
0.83
0.63
0.063
0.112
0.033
0.025
K
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
Rev :01.06.2014
3/3
www.leiditech.com
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