LM8P20P [LEIDITECH]
P-Channel Enhancement Mode Power MOSFET;
| 型号： | LM8P20P |
| 厂家： | 
Leiditech |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：803K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM8P20D
P-Channel Enhancement Mode Power MOSFET
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device
Package
TO-220F
TO-220
TO-251
TO-252
Marking
LM8P20F
LM8P20P
LM8P20U
LM8P20D
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Value
Parameter
Symbol
Unit
TO-220 TO-220F TO-251
TO-252
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current
VDSS
ID
-200
-8
V
A
(note1)
IDM
-32
±30
115
5
A
Gate-Source Voltage
VGSS
EAS
IAS
V
Single Pulse Avalanche Energy
Avalanche Current
(note2)
(note1)
(note1)
mJ
A
Repetitive Avalanche Energy
Power Dissipation (TC = 25ºC)
EAR
PD
69
mJ
W
ºC
54
83
-55~+150
Operating Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance
Value
TO-251
Parameter
Symbol
Unit
TO-220
2.3
TO-252 TO-220F
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RthJC
RthJA
1.5
60
K/W
62.5
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Rev :01.06.2018
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LM8P20D
Specifications TJ = 25Cº , unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Dynamic
V(BR)DSS
IDSS
VGS = 0V, ID = -250µA
VDS =-200V, VGS = 0V, TJ = 25ºC
VGS = ±30V
-200
--
--
--
--
1
V
μA
nA
V
IGSS
--
--
±100
-2.0
0.75
VGS(th)
RDS(on)
VDS = VGS, ID = -250µA
VGS = -10V, ID = -4.0A
-4.0
--
--
0.4
Ω
Input Capacitance
Ciss
Coss
Crss
Qg
--
--
--
--
--
--
--
--
--
--
503
104
59
--
--
--
--
--
--
--
--
--
--
VGS = 0V,
VDS = -25V,
f = 1.0MHz
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
31
VDD = -160V, ID = -8A,
VGS = -10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
3.3
16.5
35
Turn-on Delay Time
Turn-on Rise Time
20
VDD = -100V, ID =-8A,
RG = 25 Ω
ns
Turn-off Delay Time
td(off)
tf
150
36
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
IS
--
--
--
--
--
--
-8
TC = 25 ºC
A
V
ISM
-32
1.4
VSD
TJ = 25ºC, ISD = 4.0A, VGS = 0V
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, VDD = 30V, RG = 25 Ω, Starting TJ = 25 ºC
3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
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Rev :01.06.2018
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LM8P20D
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 1. Output Characteristics (TJ = 25ºC)
Figure 2. Body Diode Forward Voltage
TJ = 150ºC
TJ = 25ºC
0.2
0.4
0.6
0.8
1
1.2
- VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Figure 3. Drain Current vs. Temperature
Figure 4. BVDSS Variation vs. Temperature
10
1.2
VGS = 0V
ID = 250 μA
8
6
4
2
0
1.1
1
0.9
-50
0
50
100
150
0
30
60
90
120
150
TJ, Case Temperature (ºC)
TJ, Junction Temperature (ºC)
Figure 5. Transfer Characteristics
Figure 6. On-Resistance vs. Temperature
10
8
3
VGS = 10V
ID = -4A
TJ = 25ºC
2.5
2
6
1.5
1
TJ = 150ºC
4
2
0.5
0
0
-50
0
50
100
150
0
2
4
6
8
10
- VGS, Gate-to-Source Voltage (V)
TJ, Junction Temperature (ºC)
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Rev :01.06.2018
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LM8P20D
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 7. Capacitance
Figure 8. Gate Charge
104
VDD = -160V
VDD =-100V
Ciss
103
VDD = -40V
Coss
102
Crss
101
100
VGS = 0V
f = 1MHz
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 10. Transient Thermal Impedance
Figure 9. Transient Thermal Impedance
TO-220F
TO-220，TO-251,TO-252
101
101
100
100
D = 0.5
D = 0.2
D = 0.5
D = 0.2
10-1
D = 0.1
D = 0.1
10-1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10-2
10-3
10-2
10-6
10-5
10-4
10-3
10-2
10-1
100
10-6 10-5
10-4
10-3
10-2
10-1
100
101
10-7
Tp, Pulse Width (s)
Tp, Pulse Width (s)
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Rev :01.06.2018
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LM8P20D
Figure A：Gate Charge Test Circuit and Waveform
Figure B：Resistive Switching Test Circuit and Waveform
Figure C：Unclamped Inductive Switching Test Circuit and Waveform
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Rev :01.06.2018
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LM8P20D
TO-220F
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Rev :01.06.2018
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LM8P20D
TO-220
7/9
Rev :01.06.2018
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LM8P20D
TO-251
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Rev :01.06.2018
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LM8P20D
TO-252
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
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Rev :01.06.2018
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