LMT8N25P [LEIDITECH]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | LMT8N25P |
| 厂家： | 
Leiditech |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：2138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMT8N25D
N-Channel Enhancement Mode Power MOSFET
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device
Package
TO-220F
TO-220
TO-251
TO-252
Marking
LMT8N25F
LMT8N25P
LMT8N25U
LMT8N25D
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Value
Parameter
Symbol
Unit
TO-220 TO-220F TO-251
TO-252
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current
VDSS
ID
250
8
V
A
(note1)
IDM
32
A
Gate-Source Voltage
VGSS
EAS
IAS
V
±30
218
6.6
130
Single Pulse Avalanche Energy
Avalanche Current
(note2)
(note1)
(note1)
mJ
A
Repetitive Avalanche Energy
Power Dissipation (TC = 25ºC)
EAR
PD
mJ
W
ºC
54
83
-55~+150
Operating Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance
Value
TO-251
Parameter
Symbol
Unit
TO-220
2.3
TO-252 TO-220F
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RthJC
RthJA
1.5
60
K/W
62.5
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Rev :01.06.2018
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LMT8N25D
Specifications TJ = 25ºC , unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Dynamic
V(BR)DSS
IDSS
VGS = 0V, ID = 250µA
VDS = 250V, VGS = 0V, TJ = 25ºC
VGS = ±30V
250
--
--
--
--
--
1
V
μA
nA
V
IGSS
--
±100
2.0
VGS(th)
RDS(on)
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.0A
1.0
--
--
0.45
0.52
Ω
Input Capacitance
Ciss
Coss
Crss
Qg
--
--
--
--
--
--
--
--
--
--
467
79
39
31
1.5
15
34
8
--
--
--
--
--
--
--
--
--
--
VGS = 0V,
VDS = 25V,
f = 1.0MHz
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
VDD = 200V, ID = 8.0A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
Turn-on Delay Time
Turn-on Rise Time
VDD = 125V, ID =8.0A,
ns
RG = 25 Ω
Turn-off Delay Time
td(off)
tf
185
53
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
IS
--
--
--
--
--
--
--
8
32
1.4
--
TC = 25 ºC
A
ISM
VSD
trr
TJ = 25ºC, ISD = 4.0A, VGS = 0V
--
V
Reverse Recovery Time
Reverse Recovery Charge
158
0.8
ns
μC
VGS = 0V,IS = 8.0A,
diF/dt =100A /μs
Qrr
--
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, VDD = 30V, RG = 25 Ω, Starting TJ = 25 ºC
3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
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Rev :01.06.2018
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LMT8N25D
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 1. Output Characteristics (TJ = 25ºC)
Figure 2. Body Diode Forward Voltage
16
101
100
10-1
20V
10V
8V
7V
6V
14
12
10
8
5V
TJ = 150ºC
TJ = 25ºC
6
4
10-2
10-3
2
0
0
2
4
6
8
10 12 14 16 18 20
0.2
0.4
0.6
0.8
1
1.2
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Figure 3. Drain Current vs. Temperature
Figure 4. BVDSS Variation vs. Temperature
1.2
9
8
7
6
5
4
3
2
1
0
VGS = 0V
ID = 250 μA
1.1
1
0.9
-50
0
50
100
150
25
50
75
100
125
150
TJ, Case Temperature (ºC)
TJ, Junction Temperature (ºC)
Figure 5. Transfer Characteristics
Figure 6. On-Resistance vs. Temperature
3
9
8
7
6
5
4
3
2
1
0
VGS = 10V
ID = 4A
TJ = 25ºC
2.5
2
TJ = 150ºC
1.5
1
0.5
0
0
2
4
6
8
10
-50
0
50
100
150
VGS, Gate-to-Source Voltage (V)
TJ, Junction Temperature (ºC)
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Rev :01.06.2018
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LMT8N25D
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 7. Capacitance
Figure 8. Gate Charge
104
VDD = 50V
VDD =125V
Ciss
103
VDD = 200V
Coss
102
101
100
Crss
VGS = 0V
f = 1MHz
VDS, Drain-to-Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 10. Transient Thermal Impedance
TO-220
Figure 9. Transient Thermal Impedance
TO-220F
101
101
100
100
D = 0.5
D = 0.2
D = 0.5
D = 0.2
10-1
D = 0.1
D = 0.1
10-1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10-2
10-3
10-2
10-6
10-5
10-4
10-3
10-2
10-1
100
10-6 10-5
10-4
10-3
10-2
10-1
100
101
10-7
Tp, Pulse Width (s)
Tp, Pulse Width (s)
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Rev :01.06.2018
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LMT8N25D
Figure A：Gate Charge Test Circuit and Waveform
Figure B：Resistive Switching Test Circuit and Waveform
Figure C：Unclamped Inductive Switching Test Circuit and Waveform
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Rev :01.06.2018
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LMT8N25D
TO-220F
6/9
Rev :01.06.2018
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LMT8N25D
TO-220
7/9
Rev :01.06.2018
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LMT8N25D
TO-251
8/9
Rev :01.06.2018
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LMT8N25D
TO-252
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
9/9
Rev :01.06.2018
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