S-LDTC144TM3T5G [LEIDITECH]
Bias Resistor Transistors;
| 型号： | S-LDTC144TM3T5G |
| 厂家： | 
Leiditech |
| 描述： | Bias Resistor Transistors |
| 文件： | 总14页 (文件大小：1469K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
With Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
which is designed for low power surface mount applications.
ƽSimplifies Circuit Design
3
2
1
SOT-723
ƽReduces Board Space
ƽReduces Component Count
PIN 3
COLLECTOR
(OUTPUT)
ƽThe SOT-723 Package can be Soldered using Wave or Reflow.
ƽAvailable in 4 mm, 8000 Unit Tape & Reel
PIN 1
BASE
R1
ƽThese are Pb-Free Devices.
(INPUT)
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
R2
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
V
CBO
CEO
MARKING DIAGRAM
V
50
Vdc
I
C
100
mAdc
3
THERMAL CHARACTERISTICS
Characteristic
XX M
Symbol
Max
Unit
Total Device Dissipation
P
260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
mW
2
1
D
T = 25°C
A
mW/°C
°C/W
Derate above 25°C
xx = Specific Device Code
= Date Code
M
Thermal Resistance –
Junction-to-Ambient
R
480 (Note 1)
205 (Note 2)
θ
JA
T
°C
°C
150
Junction Temperature
J
–55 to +150
Tstg
Storage Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
01.06.2015
1/14
Rev :
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Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Package
Shipping
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
S-LDTC114EM3T5G
S-LDTC124EM3T5G
S-LDTC144EM3T5G
S-LDTC114YM3T5G
S-LDTC114TM3T5G
S-LDTC143TM3T5G
S-LDTC123EM3T5G
S-LDTC143EM3T5G
S-LDTC143ZM3T5G
S-LDTC124XM3T5G
S-LDTC123JM3T5G
S-LDTC115EM3T5G
8A
8B
8C
8D
94
8F
8H
8J
8K
8L
8M
8N
8P
8T
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
10
22
47
47
∞
∞
2.2
4.7
47
47
47
100
22
∞
8000/Tape & Reel
SOT−723
LDTC144WM3T5G S-LDTC144WM3T5G
LDTC144TM3T5G S-LDTC144TM3T5G
47
01.06.2015
2/14
Rev :
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Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V = 50 V, I = 0)
Symbol
Min
Typ
Max
Unit
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector−Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
0.2
EBO
EB
C
Collector−Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector−Emitter Breakdown Voltage (Note 3)
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 3)
DC Current Gain
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
h
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
FE
(V = 10 V, I = 5.0 mA)
100
140
140
350
350
15
CE
C
80
160
160
8.0
15
80
80
80
80
80
160
30
200
150
140
150
140
350
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
−
−
0.25
Vdc
Vdc
C
B
(I = 10 mA, I = 5 mA)
LDTC123EM3T5G
C
B
(I = 10 mA, I = 1 mA)
LDTC143TM3T5G/LDTC114TM3T5G/
LDTC143EM3T5G/LDTC143ZM3T5G/
LDTC124XM3T5G/LDTC144TM3T5G
C
B
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
LDTC114EM3T5G
LDTC124EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC144EM3T5G
LDTC144TM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
CC
B
L
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
ON CHARACTERISTICS (Note 4)
Characteristic
Symbol
Min
Typ
Max
Unit
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
OH
4.9
−
−
Vdc
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
LDTC143TM3T5G
CC
B
L
LDTC143ZM3T5G
LDTC114TM3T5G
LDTC144TM3T5G
Input Resistor
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
61.1
kW
47
Resistor Ratio
R /R
1 2
LDTC114EM3T5G/LDTC124EM3T5G/
LDTC144EM3T5G/LDTC115EM3T5G
LDTC114YM3T5G
0.8
1.0
1.2
0.17
−
0.8
0.055
0.38
0.038
1.7
0.21
−
1.0
0.25
−
1.2
0.185
0.56
0.056
2.6
LDTC143TM3T5G/LDTC114TM3T5G/LDTC144TM3T5G
LDTC123EM3T5G/LDTC143EM3T5G
LDTC143ZM3T5G
0.1
LDTC124XM3T5G
LDTC123JM3T5G
LDTC144WM3T5G
0.47
0.047
2.1
V
V
Input voltage
Input voltage
LDTC123JM3T5G
LDTC123JM3T5G
(V = 5.0 V, I = 100mA)
V
I(off)
CC
O
−
−
−
0.5
−
(V = 0.3 V, I = 5 mA)
V
I(on)
O
O
1.1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
300
250
200
150
100
R
q
= 480°C/W
JA
50
0
−ꢀ50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
01.06.2015
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Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EM3T5G
1
1000
I /I = 10
C B
V
= 10 V
T ꢁ=ꢁ−25°C
CE
A
25°C
T ꢁ=ꢁ75°C
A
25°C
0.1
−25°C
75°C
100
0.01
0.001
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. V
versus I
Figure 3. DC Current Gain
CE(sat)
C
4
3
100
10
25°C
75°C
f = 1 MHz
I = 0 V
E
T ꢁ=ꢁ−25°C
A
T = 25°C
A
1
0.1
2
1
0
0.01
0.001
V
= 5 V
9
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC124EM3T5G
1000
1
V
CE
= 10 V
I /I = 10
C B
T ꢁ=ꢁ75°C
A
25°C
25°C
T ꢁ=ꢁ−25°C
A
0.1
−25°C
75°C
100
0.01
10
0.001
1
10
100
0
20
40
50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. V
versus I
Figure 8. DC Current Gain
CE(sat)
C
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
T ꢁ=ꢁ−25°C
A
I = 0 V
E
T = 25°C
A
0.1
0.01
V
O
= 5 V
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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Rev :
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Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC144EM3T5G
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
−25°C
25°C
75°C
100
T ꢀ=ꢀ−25°C
A
0.1
0.01
10
0
20
I , COLLECTOR CURRENT (mA)
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. V
versus I
Figure 13. DC Current Gain
CE(sat)
C
1
100
10
1
25°C
f = 1 MHz
I = 0 V
75°C
E
T ꢀ=ꢀ−25°C
A
0.8
T = 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢀ=ꢀ−25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
01.06.2015
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Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114YM3T5G
1
300
T ꢁ=ꢁ75°C
A
V
= 10
I /I = 10
C B
CE
T ꢁ=ꢁ−25°C
250
200
150
100
A
25°C
25°C
75°C
0.1
−25°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. V
versus I
Figure 18. DC Current Gain
CE(sat)
C
4
3.5
3
100
10
1
f = 1 MHz
T ꢁ=ꢁ75°C
25°C
A
l = 0 V
E
T = 25°C
A
−25°C
2.5
2
1.5
1
0.5
0
V
O
= 5 V
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
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Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC143ZM3T5G
1
0.1
1000
100
I /I = 10
C B
75°C
25°C
75°C
T
= –25°C
A
25°C
T
A
= –25°C
0.01
10
1
V
CE
= 10 V
0.001
1
10
100
2
7
12
17
22
27
32
60
12
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 28. DC Current Gain
Figure 27. V
vs. I
CE(sat)
C
4
100
10
75°C
f = 1 MHz
3.5
3
I
= 0 A
T = –25°C
A
E
T
= 25°C
A
2.5
2
1
1.5
1
0.1
0.01
25°C
0.5
0
V
O
= 5 V
0
10
V
20
30
40
50
0
2
4
6
8
REVERSE BIAS VOLTAGE (VOLTS)
V
in,
INPUT VOLTAGE (VOLTS)
R,
Figure 29. Output Capacitance
Figure 30. Output Current vs. Input Voltage
10
V
O
= 0.2 V
T
A
= –25°C
75°C
25°C
1
0.1
0
6
18
24
30
I
C,
COLLECTOR CURRENT (mA)
Figure 31. Input Voltage vs. Output Current
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Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
V
CC
OUT
IN
LOAD
Figure 23. Open Collector Inverter:
Inverts the Input Signal
Figure 24. Inexpensive, Unregulated Current Source
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Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
PACKAGE DIMENSIONS
SOT−723
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
E
D
A
b1
−Y−
3
MILLIMETERS
INCHES
NOM MAX
0.018 0.020 0.022
HE
L
1
2
DIM MIN
NOM
0.50
0.20
0.3
0.12
MAX
0.55
0.27 0.0059 0.0079 0.0106
0.35 0.010 0.012 0.014
0.17 0.0028 0.0047 0.0067
MIN
A
b
b1
C
D
E
e
H E
L
0.45
0.15
0.25
0.07
1.15
0.75
b 2X
C
e
0.08 (0.0032) X Y
1.20
0.80
1.25
0.85
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.40 BSC
1.20
0.20
PIN 1. BASE
2. EMITTER
3. COLLECTOR
1.15
0.15
1.25
0.045 0.047 0.049
0.25 0.0059 0.0079 0.0098
SOLDERING FOOTPRINT
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm
inches
ǒ
Ǔ
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Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
Tape & Reel and Packaging Specifications for
Small-Signal Transistors, FETs and Diodes
Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure
cavity for the product when sealed with the “peel–back” cover tape.
• Two Reel Sizes Available (7"and 13",)
• Used for Automatic Pick and Place Feed Systems
• Minimizes Product Handling
• SOT–23, SC–70/SOT–323,
SC–89, SC–88/SOT–363, SC–88A/SOT–353,
SOD–323, SOD-523 in 8 mm Tape
• EIA 481, –1, –2
Use the standard device title and add the required suffix as listed in the option table below (Table 1). Note that the individual
reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is
one full reel for each line item, and orders are required to be in increments of the single reel quantity.
SC-88, SOT-363
T1 Orientation
8mm
SC-88A, SOT-353
T1 Orientation
8mm
SOD-323
SC-59, SC-70, SC-75,SOT-23
8mm
8mm
Direction of Feed
Typical Reel Orientations
Table 1. EMBOSSED TAPE AND REEL ORDERING INFORMATION
Tape Width
(mm)
Pitch
mm
Reel Size
mm(inch)
Devices Per Reel
and Minimum
Order Quantity
(7)
Device
Suffix
Package
8
4
178
3,000 T1
SOT–23
8
8
8
8
8
330
178
330
178
330
(13)
(7)
10,000 T3
3,000 T1
10,000 T3
3,000 T1
10,000 T3
4
4
SC–70/SOT–323
SC–89
(13)
(7)
(13)
8
8
8
4
4
178
330
178
(7)
(13)
(7)
3,000 T1
10,000 T3
3,000 T1
SC–88/SOT-363
SC–88A/SOT-353
SOD-323
8
8
8
330
178
330
(13)
(7)
10,000 T3
3,000 T1
10,000 T3
4
4
(13)
8
8
178
330
(7)
3,000 T1
10,000 T3
SOD-523
(13)
01.06.2015
12/14
Rev :
www.leiditech.com
Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
CARRIER TAPE SPECIFICATIONS
10 Pitches Cumulative Tolerance on
P0
P2
Tape ± 0.2mm( ± 0.008’’ )
K
D
t
E
Top Cover
Tape
A0
F
W
B1
B0
P
K0
See
Note 1
D 1
Center Lines
of Cavity
Embossment
For Components
2.0mm x 1.2mm and Larger
For Machine Reference Only
Including Draft and RADII
Concentric Around B0
User Direction of Feed
*Top Cover Tape
Thickness(t1)
0.10mm
R Min
Bar Code Label
TapeandComponents
Shall Pass Around
Radius “R”
(0.004’’ )Max.
Embossed Carrier
BendingRadius
10 o
Without Damage
100 mm
Embossment
(3.937 ’’)
Maximum Component Rotation
1 mm Max
Typical Component
Cavity Center Line
Tape
1mm(.039’’)Max
250 mm
(9.843’’)
Typical Component
CenterLine
Camber (Top View)
Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
DIMENSIONS
Tape
B1 Max
D
D
E
F
K
P
P
2
RMin TMax
WMax
1
0
Size
0.6mm
(.024’’)
8.3mm
(.327’’)
1.5+0.1mm 1.0Min
- 0.0
(.039’’)
(.059+.004’’ 1.5mmMin
- 0.0)
(.060’’)
1.75±0.1mm
(.069±.004)
3.5± 0.05mm
(.138±.002’’)
2.4mmMax 4.0 ± 0.1mm
2.0 ± 0.1mm
(.079±.002’’)
25mm
(.98’’)
30mm
(1.18’’)
4.55mm
(.179’’)
8.2mm
(.323’’)
12.1mm
(.476’’)
20.1mm
(.791’’)
8mm
(.094’’)
(.157± .004’’)
5.5± 0.05mm
(.217±.002’’)
7.5± 0.10mm
(.295±.004’’)
11.5± 0.1mm
(.453±.004’’)
6.4mmMax
(.252’’)
12 ± .30mm
(.470±.012’’)
16.3mm
12mm
16mm
24mm
7.9mmMax
(.311’’)
(.642’’)
11.9mmMax
(.468’’)
24.3mm
(.957’’)
Metric dimensions govern - English are in parentheses for reference only.
NOTE 1: A 0 , B 0 , and K 0 are determined by component size. The clearance between the components and the cavity must be within
.05 mm min. to.50 mm max.,
NOTE 2: the component cannot rotate more than 10 o within the determined cavity.
NOTE 3: If B
1
exceeds 4.2 mm (.165”) for 8 mm embossed tape, the tape may not feed through all tape feeders.
01.06.2015
13/14
Rev :
www.leiditech.com
Series
Series
LDTC114EM3T5G
S-LDTC114EM3T5G
EMBOSSED TAPE AND REEL DATA
FOR DISCRETES
T Max
Outside Dimension
Measured at Edge
13.0mm ± 0.5mm
1.5mm Min
(.512 ±.002’’)
(.06’’)
A
50mm Min
(1.969’’)
20.2mm Min
(.795’’)
Full Radius
G
Inside Dimension
Measured Near Hub
Size
A Max
G
T Max
8.4mm+1.5mm, -0.0
(.33’’+.059’’, -0.00)
14.4mm
(.56’’)
330mm
(12.992’’)
330mm
8 mm
12.4mm+2.0mm, -0.0
(.49 ’’+ .079’’, -0.00)
16.4mm+2.0mm, -0.0
(.646’’+.078’’, -0.00)
24.4mm+2.0mm, -0.0
(.961’’+.070’’, -0.00)
18.4mm
(.72’’)
12mm
16mm
24 mm
(12.992’’)
360mm
22.4mm
(.882’’)
30.4mm
(1.197’’)
(14.173’’)
360mm
(14.173’’)
Reel Dimensions
Metric Dimensions Govern –– English are in parentheses for reference only
Storage Conditions
Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred)
Humidity: 30 to 80 RH (40 to 60 is preferred )
Recommended Period: One year after manufacturing
(This recommended period is for the soldering condition only. The
characteristics and reliabilities of the products are not restricted to
this limitation)
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
01.06.2015
14/14
Rev :
www.leiditech.com
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