S-LMBTA92LT1G [LEIDITECH]
HighVoltageTransistor PNP Silicon;
| 型号： | S-LMBTA92LT1G |
| 厂家： | 
Leiditech |
| 描述： | HighVoltageTransistor PNP Silicon |
| 文件： | 总4页 (文件大小：565K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMBTA92LT1G
LMBTA93LT1G
S-LMBTA92LT1G
S-LMBTA93LT1G
Dimensions SOT-23
High Voltage Transistor
PNP Silicon
3
FEATURE
ƽHigh voltage.
1
ƽFor Telephony or Professional communication equipment applications.
ƽ
We declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
2
DEVICE MARKING AND ORDERING INFORMATION
Pin Configuration
Device
Marking
Shipping
(S-)LMBTA92LT1G
(S-)LMBTA92LT3G
2D
3000/Tape&Reel
3
2D
2E
10000/Tape&Reel
3000/Tape&Reel
COLLECTOR
(S-)LMBTA93LT1G
(S-)LMBTA93LT3G
1
BASE
2E
10000/Tape&Reel
2
MAXIMUM RATINGS
EMITTER
Value
Rating
Symbol LMBTA92 LMBTA93 Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
V CBO
V EBO
I C
–300
–300
–200
–200
Vdc
Vdc
–5.0
Vdc
–500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225
mW
TA = 25°C
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
P
D
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
417
T
J
, Tstg
–55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width 300 µs, Duty Cycle
<
< 2.0%.
1/4
01.06.2015
Rev :
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LMBTA92LT1G
LMBTA93LT1G
S-LMBTA92LT1G
S-LMBTA93LT1G
ELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise noted.)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
LMBTA92
LMBTA93
–300
–200
—
—
Collector–Emitter Breakdown Voltage
V(BR)CBO
Vdc
(IC = –100 µAdc, IE = 0)
LMBTA92
LMBTA93
–300
–200
—
—
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
Collector Cutoff Current
V(BR)EBO
–5.0
—
Vdc
CBO
I
µAdc
( VCB = –200Vdc, IE = 0)
( VCB = –300Vdc, IE = 0)
—
—
–0.1
–100
Collector Cutoff Current
( VEB = –6.0Vdc, IC = 0)
( VEB = –5.0Vdc, IC = 0)
IEBO
—
—
–0.05
–100
µAdc
µAdc
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS (3)
DC Current Gain
hFE
—
(I C =–1.0mAdc, V CE = –10 Vdc)
(I C = –10 mAdc, V CE = –10Vdc)
(I C = –30mAdc, V CE =–10 Vdc)
Both Types
Both Types
LMBTA92
LMBTA93
25
40
25
25
––
––
––
––
Collector–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
VCE(sat)
Vdc
Vdc
LMBTA92
LMBTA93
––
––
–0.5
–0.5
Base–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
V BE(sat)
—
–0.9
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4)
(I C = –10mAdc, V CE= –20Vdc, f = 100MHz)
Collector – Base Capacitance
f T
50
––
MHz
pF
C cb
(V CB = –20 Vdc, I E = 0, f = 1.0 MHz)
LMBTA92
LMBTA93
––
––
6.0
8.0
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
2/4
01.06.2015
Rev :
www.leiditech.com
LMBTA92LT1G
LMBTA93LT1G
S-LMBTA92LT1G
S-LMBTA93LT1G
150
100
T J = +125°C
V CE = –10 Vdc
+25°C
–55°C
70
50
30
20
15
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–80 –100
I C , COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
100
50
T J = 25°C
80
V
CE = –20 Vdc
C ib
60
20
10
40
30
5.0
20
2.0
1.0
C cb
0
–1.0
–2.0
–5.0
–10
–20
–50
–100
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200 –500 –1000
I C , COLLECTOR CURRENT (mA)
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Current–Gain — Bandwidth Product
Figure 2. Capacitances
–1.0
–0.8
V BE @ V CE = –10 V
–0.6
–0.4
–0.2
0
VCE(sat) @ I C /I B = 10 mA
–1.0
–2.0
–5.0
–10
–20
–50
–100
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
3/4
01.06.2015
Rev :
www.leiditech.com
LMBTA92LT1G
LMBTA93LT1G
S-LMBTA92LT1G
S-LMBTA93LT1G
SOT-23 Package Outline & Dimensions
Millimeters
Inches
Nom.
0.040
0.002
0.18
Symbol
Min. Nom. Max.
0.89 1.00 1.11
0.01 0.06 0.10
0.37 0.44 0.50
0.09 0.13 0.18
2.80 2.90 3.04
1.20 1.30 1.40
1.78 1.90 2.04
0.35 0.54 0.69
2.10 2.40 2.64
Min.
0.035
0.001
0.15
Max.
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.029
0.104
A
A1
b
c
0.003
0.110
0.047
0.070
0.014
0.083
0.005
0.114
0.051
0.075
0.021
0.094
D
E
e
L
HE
Soldering Footprint
Symbol
Millimeters
0.80
Inches
0.031
0.037
0.035
0.079
X
X1
Y
0.95
0.90
Z
2.00
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
4/4
01.06.2015
Rev :
www.leiditech.com
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