1F2(G) [LGE]

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1F2(G)
型号: 1F2(G)
厂家: LGE    LGE
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二极管 快恢复二极管
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1F1G-1F7G  
Fast Recovery Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 1.0 A  
Features  
R - 1  
Low cost  
Glass passivated junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned with Freon,Alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
Case:JEDEC R--1,molded plastic  
Dimensions in millimeters  
Polarity: Color band denotes cathode  
Weight: 0.007ounces,0.20 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
1F1G  
1F2G 1F3G 1F4G 1F5G 1F6G 1F7G UNITS  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
100  
1000  
Maximum average forw ard rectified current  
A
1.0  
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
A
V
8.3ms single half-sine-w ave  
IFSM  
25.0  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@1.0 A  
1.3  
VF  
IR  
Maximumreverse current  
@TA=25  
5.0  
A
at rated DC blocking voltage @TA=100  
Maximumreverse recovery time (Note1)  
100.0  
150  
250  
500  
ns  
trr  
pF  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
12  
CJ  
55  
Rθ  
/ W  
JA  
Operating junction temperature range  
- 55---- +150  
- 55---- + 150  
TJ  
Storage temperature range  
TSTG  
NOTE:1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance from junction to ambient.  
http://www.luguang.cn  
mail:lge@luguang.cn  
1F1G-1F7G  
Fast Recovery Rectifiers  
Ratings AND Charactieristic Curves  
FIG.1-- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
trr  
50  
N.1.  
10  
N.1.  
+0.5A  
D.U.T.  
(
- )  
0
(+)  
PULSE  
50VDC  
(APPROX)  
(-)  
GENERATOR  
(NOTE2)  
-0.25A  
OSCILLOSCOPE  
(NOTE 1)  
1
(
+ )  
N.1.  
-1.0A  
1cm  
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF  
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O  
SET TIMEBASEFOR50/100 ns /cm  
FIG.2 --TYPICAL FORWARD  
CURRENT DERATINGCURVE  
FIG.3 --TYPICAL FORWARD  
CHARACTERISTICS  
100  
10  
1.0  
TJ=25  
Pulse Width=300µS  
Single Phase  
Half Wave 60H  
Resistive or  
Inductive Load  
Z
4
2
.8  
1.0  
.6  
.4  
0.4  
0.2  
0.1  
0.06  
0.04  
.2  
0
0.02  
0.01  
0
50  
100  
150 175  
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
AMBIENT TEMPERATURE,  
INSTANTANEOUS FORWARD VOLTAGE,VOLTS  
FIG.5---TYPICAL JUNCTION CAPACITANCE  
FIG.4--PEAK FORWARD SURGE CURRENT  
25  
20  
15  
10  
16  
14  
12  
10  
TJ=125  
8.3ms Single Half  
Sine-Wave  
10  
5
4
TJ=25  
f=1MHz  
2
1
.1 .2  
.4  
1.0  
2
4
10 20  
40  
100  
0
1
2
4
1 0  
2 0  
40  
100  
NUMBEROF CYCLES AT60 Hz  
REVERSE VOLTAGE, VOLTS  
http://www.luguang.cn  
mail:lge@luguang.cn  

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