1H4(G) [LGE]
暂无描述;
| 型号： | 1H4(G) |
| 厂家： | 
LGE |
| 描述： | 暂无描述 |
| 文件： | 总2页 (文件大小：988K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1H1G-1H8G
High Efficiency Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
Features
R - 1
Diffused junction
Glass passivated chip junction
High current capability
High reliability
High surge current capability
Mechanical Data
Case:JEDEC R-1,molded plastic
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.20 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RAT INGS AND ELECT RICAL CHARACT ERIST ICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UNITS
1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
200 300 400 600 800 1000
140 210 280 420 560 700
200 300 400 600 800 1000
V
V
V
VRRM
VRMS
VDC
Maximum DC blocking voltage
100
Maximum average forw ard rectified current
1.0
A
IF(AV)
9.5mm lead length,
@TA=75
Peak forw ard surge current
8.3ms single half-sine-w ave
IFSM
30.0
A
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 1.0 A
1.0
1.3
1.7
VF
IR
V
A
Maximum reverse current
@TA=25
5.0
at rated DC blocking voltage
@TA=100
100.0
Maximum reverse recovery time (Note1)
50
20
70
15
ns
pF
/W
t rr
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
CJ
60
Rθ
JA
Operating junction temperature range
- 55 ---- + 150
- 55 ---- + 150
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance from junction to ambient.
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
1H1G-1H8G
High Efficiency Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
trr
+0.5A
D.U.T.
0
(+)
PULSE
GENERATOR
(NOTE2)
-0.25A
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE 1)
1
NONIN-
DUCTIVE
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
SET TIME BASE FOR 20/30 ns/cm
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
1H1G-1H3G
1.0
10
1H6G-1H8G
0.75
1.0
1H4G-1H5G
0.5
TJ=25
Pulse Width=300µS
Single Phase
Half Wave 60HZ
0.1
Resistive or
Inductive Load
0.25
0.01
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
0
25
50
75 100
125
150
175
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
FIG.5 -- PEAK FORWARD SURGE CURRENT
30
200
100
24
60
1H1G-1H5G
40
18
TJ=125
8.3ms Single Half
Sine-Wave
20
10
12
6
1H6G-1H8G
4
℃
TJ=25
6
2
1
0
0.1 0.2 0.4
1
2
4
10 20
40
100
1
2
4
1 0
2 0
40
100
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60Hz
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
相关型号：
1H4-AP
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
MCC
1H4-G
Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, LEAD FREE, PLASTIC, R-1, 2 PIN
SENSITRON
1H4-GT3
Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, LEAD FREE, PLASTIC, R-1, 2 PIN
SENSITRON
1H4-T3-LF
Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
WTE
1H4-TB-LF
Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
WTE
©2020 ICPDF网 联系我们和版权申明