B130 [LGE]
Schottky Barrier Rectifiers; 肖特基势垒整流器器
| 型号： | B130 |
| 厂家： | 
LGE |
| 描述： | Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B120-B160
Schottky Barrier Rectifiers
REVERSE VOLTAGE: 20 --- 60 V
CURRENT: 1.0 A
Features
DO - 214AC(SMA)
◇
11
Plastic package has Underwriters Laboratory
1 FlammabilityClassification 94V-0
4.5± 0.1
◇
◇
◇
For surface mounted applications
Low profile package
Built-in strain relief
◇
◇
Metal silicon junction, majority carrier conduction
High surge capability
5.1± 0.2
◇
Low power loss,high effciency
◇
11
For use in low voltage high frequencyinverters,free
1 wheeling and polarityprotection applications
Guardring for overvoltage protection
◇
0.2± 0.05
1.3± 0.2
High temperature soldering guaranteed:250oC/10
◇
11
1 seconds at terminals
Mechanical Data
◇
11
Case:JEDEC DO-214AC,molded plastic over
11passivated chip
Dimensions in millimeters
◇
◇
Polarity: Color band denotes cathode end
Weight: 0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
UNITS
B160
Device marking code
B120
B130
B140
B150
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRWS
VDC
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
V
V
V
Maximum DC blocking voltage
Maximum average forw ord rectified current at
1.0
I(AV)
A
A
x
TL(SEEFIG.1)
Peak forw ard surge current 8.3ms single half-
x sine-w ave superimposed on rated load(JEDEC
x Method)
IFSM
30.0
Maximum instantaneous forw ard voltage at
x 1.0A(NOTE.1)
0.5
0.7
VF
IR
V
Maximum DC reverse current (NOTE.1)
x @TA=25oC
0.5
mA
at rated DC blockjing voltage
@TA=100oC
10.0
88.0
20.0
Rθ
JA
oC/W
Typical thermal resitance (NOTE. 2)
Rθ
JL
Storage temperature range Operating junction
x and storage temperature range
oC
oC
- 55 --- +125
- 55 --- +150
Tj
Storage temperature range
TSTG
NOTE: 1.Pulse test:300 S pulse width,1%duty cycle
μ
2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm2)copper pad areas
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mail:lge@luguang.cn
B120-B160
Schottky Barrier Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- FORWARD DERATING CURVE
FIG.2-- PEAK FORWARD SURGE CURRENT
50
1.0
Resistive or
inductive Load
TL=100OC
8.3ms Single Half Sine-Wave
(JEDEC Method)
40
30
20
10
0
0.5
P.C.B.MOUNTED ON
0.2X0.2(5.0X5.0mm)
COPPERPAD AREAS
0
50 60 70 80 90 100 110 120 130 140 150 160 170
1
10
100
LEADTEMPERATURE
℃
NUMBER OF CYCLES AT60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
50
100
TJ=125OC
B120-B140
10
10
B150-B160
TJ=100OC
TJ=1250C
1
Puise Width=300
1%DUTY CYCLE
S
1
0.1
TJ=750C
TJ=25OC
0.1
0.01
B120-B140
B150-B160
TJ=250C
0.01
0
1.6
0.2 0.4 0.6 0.8 1.0 1.2
1.4
0.001
0
20
40
60
80 100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
％
FIG.5--TYPICAL JUNCTION CAPACITANCE
400
100
TJ=25 0
f=1.0MHz
C
Vsig=50mVp-p
B120-B140
B150-B160
10
0.1
100
1
10
REVERSE VOLTAGE,VOLTS
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mail:lge@luguang.cn
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