B5818W [LGE]
Schottky Barrier Diode; 肖特基二极管
| 型号： | B5818W |
| 厂家： | 
LGE |
| 描述： | Schottky Barrier Diode |
| 文件： | 总2页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B5817W-B5819W
Schottky Barrier Diode
+
SOD-123
0.022(0.55)
Typ. Min.
0.053(1.35)
Max.
-
0.152(3.85)
0.140(3.55)
0.112(2.85)
0.100(2.55)
Features
0.010(0.25)
Min.
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
0.067(1.70)
0.055(1.40)
0.006(0.15)
Typ. Min.
MARKING: B5817W: SJ
B5818W:SK
0.004(0.10)
Max.
B5819W: SL
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Unit
Parameter
Symbol
B5817W
B5818W
B5819W
Non-Repetitive Peak reverse voltage
V
VRM
20
30
40
VRRM
VRWM
VR
Peak repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
20
14
30
21
40
28
V
V
RMS Reverse Voltage
VR(RMS)
Average Rectified Output Current
Peak forward surge current @=8.3ms
Repetitive Peak Forward Current
IO
1
A
A
IFSM
IFRM
25
625
mA
Power Dissipation
Pd
250
500
mW
K/W
℃
Thermal
Ambient
Resistance
Junction
to
RθJA
TSTG
Storage temperature
-65~+150
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
IR= 1mA
B5817W
20
30
40
Reverse breakdown voltage
V(BR)
V
B5818W
B5819W
B5817W
B5818W
B5819W
VR=20V
VR=30V
VR=40V
Reverse voltage leakage current
IR
1
mA
V
B5817W
B5818W
B5819W
IF=1A
IF=3A
IF=1A
IF=3A
IF=1A
IF=3A
0.45
0.75
0.55
0.875
0.6
Forward voltage
VF
V
V
0.9
Diode capacitance
CD
VR=4V, f=1MHz
120
pF
http://www.luguang.cn
mail:lge@luguang.cn
B5817W-B5819W
Schottky Barrier Diode
Typical Characteristics
http://www.luguang.cn
mail:lge@luguang.cn
相关型号：
B5818W-TP
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B5818WS-TP
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
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