BAS40W [LGE]
Schottky Diode; 肖特基二极管
LGE 
BAS40W/-04/-05/-06
Schottky Diode
SOT-323
Features
Low Forward Voltage
Fast Switching
Dimensions in inches and (millimeters)
BAS40W MARKING: 43•
BAS40W-06 MARKING: 46
BAS40W-05 MARKING：45
BAS40W-04 MARKING：44
Maximum Ratings @TA=25℃
Parameter
Symbol
Limits
Unit
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
200
150
Forward continuous Current
IFM
mA
Power Dissipation
PD
RθJA
TJ
mW
℃/W
℃
Thermal Resistance. Junction to Ambient Air
Junction temperature
833
125
Storage temperature range
TSTG
-65-125
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)
IR
Test conditions
IR= 10μA
MIN
40
MAX
200
UNIT
V
Reverse breakdown voltage
Reverse voltage leakage current
VR=30V
nA
IF=1mA
380
Forward voltage
VF
CD
t r r
mV
pF
nS
IF=40mA
1000
Diode capacitance
Reverse Recovery time
VR=0,f=1MHz
5
Irr=1mA, IR=IF=10mA
5
RL=100Ω
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mail:lge@luguang.cn
BAS40W/-04/-05/-06
Schottky Diode
Typical Characteristics
http://www.luguang.cn
mail:lge@luguang.cn
相关型号：
BAS40W-04-13
Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
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