BAS70-05T [LGE]
Surface Mount Schottky Barrier Diodes; 表面贴装肖特基势垒二极管
| 型号： | BAS70-05T |
| 厂家： | 
LGE |
| 描述： | Surface Mount Schottky Barrier Diodes |
| 文件： | 总2页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS70T/-04T/-05T/-06T
Surface Mount Schottky Barrier Diodes
SOT-523
Features
Low turn-on voltage.
Fast switching.
Ultra-small surface mount package.
PN junction guard ring for transient and
ESD protection.
Dimensions in inches and (millimeters)
Applications
Schottky barrier diodes.
BAS70-05T
BAS70-06T
BAS70T
BAS70-04T
Ordering Information
Type No.
Marking
Package Code
BAS70T
7C
7D
7E
7F
SOT-523
SOT-523
SOT-523
SOT-523
BAS70-04T
BAS70-05T
BAS70-06T
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VRRM
VRWM
VR
Peak repetitive reverse voltage
Working peak reverse voltage
DC reverse voltage
70
V
VR(RMS)
IF
RMS reverse voltage
70
V
Forward continuous voltage
200
mA
Non-repetitive peak forward surge current
@t<1.0s
IFSM
100
mA
Pd
Power dissipation
150
mW
℃/W
℃
RθJA
Tj,Tstg
Thermal resistance junction to ambient
Junction and Storage Temperature
833
-65~150
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mail:lge@luguang.cn
BAS70T/-04T/-05T/-06T
Surface Mount Schottky Barrier Diodes
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V(BR)R
IR=10μA
70
V
Leakage current
Forward voltage
IR
VR=50V,tp<300μs
100
nA
IF=1.0mA,tp<300μS
IF=15mA,tp<300μS
410
VF
mV
1000
Typical total capacitance
Reverse recovery Time
CT
trr
VR=0V,f=1MHz
2.0
5.0
pF
ns
IF=IR=10mA,Irr=0.1*IR,RL=100Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
http://www.luguang.cn
mail:lge@luguang.cn
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